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fet2-10 Datasheet PDF File

For fet2-10 Found Datasheets File :: 187 Search Time::2.734ms
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				NEC Corp.
Part No.	UPA1951 UPA1951TE UPA1951TE-T2
OCR Text	...e - C/W 1000 PD (FET1) : PD (FET2) = 1: 0 100 PD (FET1) : PD (FET2) = 1: 1 10 Single pulse Mounted on FR-4 board of 5000 mm 2 x 1.1 mm 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 1 Data Sheet G15613EJ1V0DS 3 PA19...
Description	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Pch enhancement type MOS FET
File Size	72.14K / 8 Page	View it Online	Download Datasheet

				NEC
Part No.	UPA1855 UPA1855GR-9JG
OCR Text	...d of 50cm x 1.1mm PD(FET1) : PD(FET2) = 1:1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 VGS = 4.5 V VGS = 4.0 V ID - Drain Current - A TRANSFER CHARACTERISTICS 100 10 ID - Drai...
Description	Nch enhancement type MOS FET MOS FIELD EFFECT TRANSISTOR
File Size	65.94K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1010
OCR Text	...ion are applicable for FET1 and FET2 unit Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdow...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
File Size	67.12K / 10 Page	View it Online	Download Datasheet

				Renesas
Part No.	TBB1010
OCR Text	...ion are applicable for fet1 and fet2 unit item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6??vi d ...10 a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss +6 ? ? v i g2 = +10 a, v ...
Description	Transistors>Amplifiers/MOSFETs
File Size	85.89K / 12 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA1874GR-9JG UPA1874
OCR Text	... 150 0.01 PD (FET1) : PD (FET2) = 1 : 1 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 35 30 Pulsed FORWARD TRANSFER CHARACTERISTICS 100 10 ID - Drain Current - A Pulsed ...
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	109.75K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA1874B UPA1874BGR-9JG UPA1874BGR-9JG-E1 UPA1874BGR-9JG-E2
OCR Text	...50 cm2 x 1.1 mm PD (FET1) : PD (FET2) = 1:1 100 ms DC (2 units) 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W 1000 Mounted on ...
Description	N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	141.35K / 7 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	UPA1872B UPA1872BGR-9JG
OCR Text	...50 cm2 x 1.1 mm PD (FET1) : PD (FET2) = 1:1 RDS(on) Limited (at VGS = 4.5 V) PW = 10 s 100 s 1 ms 10 ms 100 ms DC (2units) ID - Drain Current - A ID(DC) 1000 Mounted on FR-4 board of 25 cm2 x 1.6 mm 100 Mounted on ceramic board of ...
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	160.74K / 7 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	FW231A FW231A-TL-E
OCR Text	... 1unit p d (fet1) -- p d (fet2) total dissipation mounted on a ceramic board (1500mm 2 5 0.8mm), pw 10s ambient temperature, ta -- c allowable power dissipation, p d -- w allowable power dissipation (fet1), p d -- w a...
Description	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications
File Size	36.91K / 4 Page	View it Online	Download Datasheet

For fet2-10 Found Datasheets File :: 187 Search Time::2.734ms
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