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050CS KMX223G PS2915 SMA5J15A K5107 DV20220 F55147RF RT1P140X
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    21DQ03L

Nihon Inter Electronics Corporation
Part No. 21DQ03L
Description Extremely Low Forward Voltage drop Diode

File Size 38.35K  /  6 Page

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    DN050

KODENSHI KOREA CORP.
Part No. DN050
Description Extremely low collector-to-emitter saturation voltage
Suitable for low voltage large current drivers

File Size 188.95K  /  4 Page

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    DN100

KODENSHI KOREA CORP.
Part No. DN100
Description Extremely low collector-to-emitter saturation voltage
Suitable for low voltage large current drivers

File Size 169.26K  /  4 Page

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    GI821 GI828 GI820 GI826 GI822 GI824

GE Security, Inc.
GE[General Semiconductor]
Part No. GI821 GI828 GI820 GI826 GI822 GI824
Description Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 820uF; Voltage: 63V; Case Size: 16x35.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 680uF; Voltage: 63V; Case Size: 16x31.5 mm; Packaging: Bulk
Fast Switching Plastic Rectifier(快速转换塑胶整流器)

File Size 44.20K  /  2 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F457 Q62702-F456
Description EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS

File Size 104.66K  /  5 Page

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    TY Semiconductor Co., Ltd
Part No. CES2305
Description High dense cell design for extremely low RDS(ON)

File Size 329.70K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. CES2308
Description High dense cell design for extremely low RDS(ON).

File Size 174.13K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. CES2312
Description High dense cell design for extremely low RDS(ON).

File Size 304.44K  /  2 Page

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    BFT66 BFT67

Siemens Semiconductor Group
Part No. BFT66 BFT67
Description EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS

File Size 104.55K  /  5 Page

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    TY Semiconductor Co., Ltd
Part No. CES2313A
Description High dense cell design for extremely low RDS(ON).

File Size 223.14K  /  2 Page

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