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  di-750 Datasheet PDF File

For di-750 Found Datasheets File :: 4240    Search Time::0.828ms    
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    IRHF7310SE

International Rectifier
Part No. IRHF7310SE
OCR Text ...VGS = 0V Tj = 25C, IF = 1.15A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L...750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per n...
Description TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=4.5ohm, Id=1.15A)

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    Q6012LTH1LEDTP

Littelfuse
Part No. Q6012LTH1LEDTP
OCR Text ...ated junction temperature ? di/dt performance of 70 a/ s ? quadrac version in cludes intergrated diac ? pr ovides full control...750: method 1040, condition a rated v drm (vac-peak), 110c, 1008 hours temperature cycling mil-std...
Description Q6012LTH1LED series is designed to meet low load current characteristics typical in LED lighting applications.

File Size 588.85K  /  6 Page

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    NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SK3322 2SK3322-ZK 2SK3322-S 2SK3322-ZJ 2SK3322-ZK-AZ K3322-ZK
OCR Text ...GS = 0 V IF = 5.5 A, VGS = 0 V, di/dt = 50 A/s 15 4 4.4 1.0 1.6 5.3 VF(S-D) trr Qrr s C Note Pulsed TEST CIRCUIT 1 AVALANCHE CA...750.1 2.54 TYP. 0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.2 0.750.3 2.54...
Description 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB MP-25ZK, 3 PIN
SWITCHING N-CHANNEL POWER MOSFET 开关N沟道功率MOSFET

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    AOB25S65 AOT25S65 AOTF25S65 AOB25S65L

Alpha & Omega Semicondu...
Alpha & Omega Semiconductor...
Alpha & Omega Semiconductors
Part No. AOB25S65 AOT25S65 AOTF25S65 AOB25S65L
OCR Text ...z output capacitance i f =12.5a,di/dt=100a/ m s,v ds =400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =12.5a, r g =25 w ...750 900 25 50 75 100 125 150 175 t case (c) figure 14: avalanche energy e as (mj) 0.01 0.1 1 10 10...
Description 650V 25A a MOS TM Power Transistor
650V 25A a MOS Power Transistor

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    IRHN2C50SE

International Rectifier
Part No. IRHN2C50SE
OCR Text ...00 ns t j = 25c, i f = 10.4a, di/dt 100a/ m s q rr reverse recovery charge 16 m cv dd 50v ? t on forward turn-on time intrinsic...750, test method 1019. international rectifier has imposed a standard gate voltage of 12 volts per n...
Description (IRHN2C50SE / IRHN7C50SE) TRANSISTOR N-CHANNEL

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    COM7915T COM7905T COM7912T

List of Unclassifed Manufacturers
ETC[ETC]
Part No. COM7915T COM7905T COM7912T
OCR Text ...Standby Current Drain I CD S DI C D S (ie Ln) DI C D S (Load) VD O I (pk) O IS D DV IN DV O U T NO DV O U T Dt DV O U T = 100mV, IO = 1.0...750 mA O V RLOAD I = 5mA to 1.5 Amp O 30 32 * * 60 16 30 35 . Standby Current Drain I...
Description COMMERCIAL OFF-THE-SHELF FIXED VOLTAGE NEGATIVE REGULATORS IN TO-257

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    IL4218 IL4218NBSP

Infineon Technologies AG
Part No. IL4218 IL4218NBSP
OCR Text ...0.67 VDRM, Tj=80C VD=0.67 VDRM, di/dtcrq15 A/ms Tj=25C VD=0.67 VDRM, di/dtcrq15 A/ms Tj=80C Critical Rate of Rise of Voltage at Current Commutation 10000 5000 V/s Off-State Current Thermal Resistance, Junction to Lead Package C...
Description TRIAC-DRIVER-OUTPUT OPTOCOUPLER,1-CHANNEL,613V ISOLATION,DIP
From old datasheet system

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    APT50M85JVFR

Advanced Power Technology
Part No. APT50M85JVFR
OCR Text ...ecovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [...750 Method 3471 4 Starting T = +25C, L = 2.89mH, R = 25, Peak I = 30A j G L 5 I -I [Cont.], di/ = 1...
Description POWER MOS V 500V 50A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    IRHN9230

IRF[International Rectifier]
Part No. IRHN9230
OCR Text ...-- 400 ns Tj = 25C, IF = -6.5A, di/dt -100 A/s -- -- 3.0 C VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially ...750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per ...
Description TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

File Size 87.57K  /  4 Page

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    APT50M85JVFR

Microsemi Corporation
Part No. APT50M85JVFR
OCR Text ...ecovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [...750 Method 3471 4 Starting T = +25C, L = 2.89mH, R = 25, Peak I = 30A j G L 5 I - -I [Cont.], di/ = ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 71.99K  /  4 Page

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