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17807 MOTOROLA 2SK307 5S26AJ CMD234 ETK6207 MP4501 38700
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Part No. 405347402
OCR Text ...lectr olytic, wr ought copper constr uction n cor r osion-r esistant, electr o-tin plating n high-compr ession ter mination design n accurate color coding scheme n economical, standar d length bar r el n single or dual mounting ...
Description COPPER ALLOY, TIN FINISH, WIRE TERMINAL

File Size 309.53K  /  8 Page

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    AN4138

STMicroelectronics
Part No. AN4138
OCR Text ...source or sink). there are more constr aints on the source side, this is why we have chosen this one in the datasheet. the duration of the eye corresponds to a bit time. this diagram visualizes signal duration, synchronizati on, overshoot...
Description This application note presents the HSP061-2

File Size 208.83K  /  9 Page

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    M/A-COM Technology Solu...
Part No. XP1050-QJ-15
OCR Text ...lable and the power dissipation constr aints, the bias circuit may be a single transistor or a low-power operational amplifier, with a low value resistor in se ries with the drain supply used to sense the current. app note [2] pw...
Description 2.5 W Power Amplifier

File Size 188.43K  /  7 Page

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    AN1228

STMicroelectronics
Part No. AN1228
OCR Text ...t of the inpu t capacitance and constr ains device switching speed which is comparable to limiting the maximum frequency of operation. c ds is the capacitance formed between the drain and ground plane where the referenced ground plane i...
Description How to relate LMOS device parameters to RF performance

File Size 72.53K  /  6 Page

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    MBRD20150CT-15

Diodes Incorporated
Part No. MBRD20150CT-15
OCR Text ...d benefits ? guard ring die constr uction for transient protection ? high surge current capability ? low forward voltage drop ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green devi...
Description 20A SCHOTTKY BARRIER RECTIFIER

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    AN3318

STMicroelectronics
Part No. AN3318
OCR Text ...source or sink). there are more constr aints on the source side, this is why we have chosen this one on the datasheet. the duration of the eye corresponds to a bit time. this diagram visualizes signal duration, synchronizati on, overshoot...
Description This Application note presents the HSP061-4NY8 and its capability

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    Union Semiconductor, In...
Part No. UM5204EECD
OCR Text ...ssion lines. the low inductance constr uction minimizes voltage overshoot during high current surges. this device is optimized for esd protection of portable electronics. they may be used to meet the esd immunity requirements of iec 6100...
Description Quad Channel Low Capacitance ESD Protection Array

File Size 190.07K  /  6 Page

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    Union Semiconductor, In...
Part No. UM5204EECE
OCR Text ...ssion lines. the low inductance constr uction minimizes voltage overshoot during high current surges. this device is optimized for esd protection of portable electronics. they may be used to meet the esd immunity requirements of iec 6100...
Description Quad Channel Low Capacitance ESD Protection Array

File Size 178.50K  /  6 Page

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    Elite Semiconductor
Part No. AD82586C-QG24NAT
OCR Text ...nvironment test board, which is constr ucted with a thermally efficient, 4-layers pcb (2s2p). the simulation is tested using t he jesd51-5 thermal me asurement standard. note 1.3: jt represents the thermal parameter for the heat flow ...
Description 2x20W Stereo Digital Audio Amplifier

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    IL2904-11 IL2904D

IK Semicon Co., Ltd
Part No. IL2904-11 IL2904D
OCR Text ... v in and v out shoul d be constr ai ned to the r ange gnd (v in or v out ) v c c . unused i nputs must al ways be ti ed to an appr opr i ate l ogi c vol tage l evel (e. g. , ei ther gnd or v cc ). unused outputs must be ...
Description Low Power Dual Operational Amplifier
   Low Power Dual Operational Amplifier

File Size 363.84K  /  6 Page

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