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Cypress
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| Part No. |
CY7C1338 7C1338
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| OCR Text |
...tive LOW. Qualified with BWE to conduct byte writes. Sampled on the rising edge. BW0 controls DQ [7:0] and DP0, BW1 controls DQ[15:8] and DP1, BW2 controls DQ[23:16] and DP2, and BW3 controls DQ [31:24] and DP3. See Write Cycle Descriptions... |
| Description |
128K x 32 Synchronous-Flow-Through 3.3V Cache RAM
From old datasheet system
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| File Size |
271.46K /
16 Page |
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it Online |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1337 7C1337
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| OCR Text |
...tive LOW. Qualified with BWE to conduct byte writes to the SRAM. Sampled on the rising edge of CLK. Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global write is conducted. (ALL bytes are written, reg... |
| Description |
32K x 32 Synchronous-Pipelined Cache RAM(32K x 32 同步流水线式高速缓冲存储器 RAM)
From old datasheet system
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| File Size |
320.45K /
17 Page |
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it Online |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1334 7C1334
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| OCR Text |
...ctive LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising edge of CLK. BWS0 controls DQ[7:0], BWS1 controls DQ[15:8], BWS2 controls DQ[23:16], BWS0 controls DQ[31:24]. Write Enable Input, active LOW. Sampled on the r... |
| Description |
64Kx32 Flow-Thru SRAM with NoBL Architecture(B>NoBL结构4Kx32流通式 SRAM)
From old datasheet system
64Kx32 Pipelined SRAM with NoBL Architecture
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| File Size |
183.37K /
11 Page |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1333 7C1333 CY7C1333-66AC CY7C1333-50AC
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| OCR Text |
...ctive LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising edge of CLK. BWS0 controls DQ[7:0], BWS1 controls DQ[15:8], BWS2 controls DQ[23:16], BWS0 controls DQ[31:24]. Write Enable Input, active LOW. Sampled on the r... |
| Description |
64Kx32 Flow-Thru SRAM with NoBL Architecture(B>NoBL结构4Kx32流通式 SRAM)
64Kx32 Flow-Thru SRAM with NoBL⑩ Architecture
From old datasheet system
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| File Size |
179.79K /
12 Page |
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it Online |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1330 7C1330
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| OCR Text |
...tive LOW. Qualified with BWE to conduct byte writes to the SRAM. Sampled on the rising edge of CLK. Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global write is conducted. (ALL bytes are written, reg... |
| Description |
64K x 32 Synchronous-Pipelined Cache RAM(64K x 32 同步流水线式高速缓冲存储器 RAM)
From old datasheet system
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| File Size |
316.54K /
16 Page |
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it Online |
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Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
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| Part No. |
CY7C1352-133AC CY7C1352-80AC
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| OCR Text |
...tive low. qualified with we to conduct writes to the sram. sampled on the rising edge of clk. bws 0 controls dq [7:0] and dp 0 , bws 1 controls dq [15:8] and dp 1 . see write cycle description table for details. 88 we input- synchron... |
| Description |
256K x18 Pipelined SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 7 ns, PQFP100
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| File Size |
187.29K /
12 Page |
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it Online |
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