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For co-package Found Datasheets File :: 59928    Search Time::1.578ms    
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    HD74LV00A

HITACHI[Hitachi Semiconductor]
Part No. HD74LV00A
OCR Text ....htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electron...
Description Quad. 2-input NAND Gates

File Size 50.42K  /  13 Page

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    HE8050

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HE8050
OCR Text ...T=1s 100 Capacitance (pF) Co 10 10 1 0.1 1 10 100 1000 1 1 10 100 Reverse Biased Voltage (V) Forward Voltage-VCE (V) ...Package HSMC Package Code : A *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.17...
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 35.35K  /  3 Page

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    ICM7213 ICM7213IPD FN3165

INTERSIL[Intersil Corporation]
Part No. ICM7213 ICM7213IPD FN3165
OCR Text ... (PARALLEL RESONANT) CM = 17mpF CO = 2.5pF WIDTH 1 2 14 13 12 ICM7213 11 10 IDD 9 8 N.O. T.P. INHIBIT N.O. 3 4 5 6 7 + VSUPPLY - 30pF 30pF 9-13 ICM7213 Detailed Description Supply Voltage Considerations ...
Description From old datasheet system
One Second/One Minute Timebase Generator

File Size 47.30K  /  6 Page

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    IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V

IDT[Integrated Device Technology]
Part No. IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V632S6PFG8 IDT71V632S6PFI IDT71V632S6PFI8 IDT71V632S5PF8 IDT71V632S5PFG IDT71V632S5PFG8 IDT71V632S5PFI8 IDT71V632S7PF IDT71V632S7PF8 IDT71V632S7PFG IDT71V632S7PFI IDT71V632S7PFI8 IDT71V632S8PF IDT71V632S8PF8
OCR Text ...V SSQ V IH V IH V IL Param eter Co re S up p ly Vo ltag e I/O S up p ly Vo ltag e G ro und Inp ut Hig h Vo ltag e -- Inp uts Inp ut Hig h Vo...package) Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 3dV VOUT = 3dV Max. 6 7 Un...
Description 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect
3.3V 64K x 32 Pipelined
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect

File Size 271.54K  /  19 Page

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    IRF130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF130SMD
OCR Text ...) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 1/00 IRF130SMD ELECTRICAL CHARACTERISTICS (TC = 25C ...PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance IS = 11A VGS = 0 IS = 1...
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.36K  /  2 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ....4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM...Package Outline TO-262 Outline Part Marking Information TO-262 IRF1310NS/L Tape & Reel Info...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ...5 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25C unles...PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source ...
Description N-CHANNEL POWER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...5 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25C unles...PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source ...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...5 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25C unles...PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source ...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...5 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 IRF250SMD ELECTRICAL CHARACTERISTICS (Tamb = 2...PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source ...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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