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Macronix International Co., Ltd.
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| Part No. |
MX69F1602C3TXBI-70 MX69F1602C3TXBI-90
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| OCR Text |
...he typical iccs current is 7ua (cmos) at 3.0v vcc. as cef and r e - set are at vcc, icc cmos standby mode is enabled. when reset is at gnd, the reset mode is enabled which minimize power consumption and provide data write pro- tection. the ... |
| Description |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY SPECIALTY MEMORY CIRCUIT, PBGA66
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| File Size |
472.54K /
51 Page |
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it Online |
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Integrated Device Technology, Inc.
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| Part No. |
IDT54FCT821ALSO
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| OCR Text |
cmos bus interface register 1 june 2002 military and commercial temperature ranges the idt logo is a registered trademark of integrated devi...0v 6 10 pf c out output capacitance v out = 0v 8 12 pf capacitance (t a = +25c, f = 1.0mhz) note:... |
| Description |
HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER 高性能CMOS总线接口寄存
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| File Size |
76.03K /
7 Page |
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it Online |
Download Datasheet |
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International Business Machines, Corp.
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| Part No. |
IBM0164405B
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| OCR Text |
...abricated in ibms most advanced cmos silicon gate process technology. the circuit and process design allow this dram to achieve high perform...0v f or pulse widths o f 4.0ns with 3.3 v olt. v il m a y undershoot to -2.0v f or pulse width ... |
| Description |
16M x 4 13/11 EDO DRAM(16M x 4 动态RAM（超页面模式并带24条地址线，其中13条为行地址选通，11条为列地址选通）) 1,600 × 4 13/11 EDO公司的DRAM,600 × 4动态随机存储器（超页面模式并带24条地址线，其中13条为行地址选通，11条为列地址选通）
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| File Size |
368.65K /
29 Page |
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it Online |
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