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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX837EUS
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 44 x 31 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 3 microns (as drawn) 3 microns (as drawn) 5 mil. Sq... |
| Description |
PLASTIC ENCAPSULATED DEVICES
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| File Size |
88.00K /
8 Page |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX8521ETP
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 120 x 120 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 0.8 microns (as drawn) 0.8 microns (as drawn) 5 m... |
| Description |
MAXIM INTEGRATED PRODUCTS
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| File Size |
94.42K /
8 Page |
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it Online |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX8556ETE
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 110 x 90 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None Metal1, Metal2 & Metal3 = 0.6 microns (as drawn) M... |
| Description |
PLASTIC ENCAPSULATED DEVICES
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| File Size |
160.76K /
8 Page |
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it Online |
Download Datasheet |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX8557ETE
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 110 x 90 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None Metal1, Metal2 & Metal3 = 0.6 microns (as drawn) M... |
| Description |
PLASTIC ENCAPSULATED DEVICES
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| File Size |
160.86K /
8 Page |
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it Online |
Download Datasheet |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX8863TEUK
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 38 x 55 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 1.2 microns (as drawn) 1.2 microns (as drawn) 5 mil... |
| Description |
PLASTIC ENCAPSULATED DEVICES
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| File Size |
139.38K /
8 Page |
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it Online |
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MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
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| Part No. |
MAX9018AEKA
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 24 x 80 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 0.8 microns (as drawn) 0.8 microns (as drawn) 5 mil... |
| Description |
PLASTIC ENCAPSULATED DEVICES
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:11-13 RoHS Compliant: No
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| File Size |
89.62K /
8 Page |
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it Online |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX9020EKA
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 24 x 80 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 0.8 microns (as drawn) 0.8 microns (as drawn) 5 mil... |
| Description |
PLASTIC ENCAPSULATED DEVICES
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| File Size |
76.01K /
6 Page |
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it Online |
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PEREGRINE[Peregrine Semiconductor Corp.]
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| Part No. |
PE42693DTI EK-42693-01 PE42693 PE42693DBI
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| OCR Text |
...matching with the outermost ANT bondpad. 2. Pulsed RF input duty cycle of 50% and 4620 s, measured per 3GPP TS 45.005. Note: All datasheet parameters are tested and specified using only the antenna pad connection closest to edge of the die.... |
| Description |
SP9T UltraCMOS 2.75 V Switch 100 - 3000 MHz, 68 dBm IIP3
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| File Size |
95.29K /
4 Page |
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it Online |
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