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  avalanche-rugged Datasheet PDF File

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    IRFRU110A IRFU110A

Intersil Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. IRFRU110A IRFU110A
OCR Text Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) IRFR/U110A BVDSS = 100 V ...
Description Advanced Power MOSFET

File Size 253.55K  /  7 Page

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    IRLR_U110A IRLRU110A IRLR110A IRLU110A IRLR110ATF IRLR110ATM IRLU110ATU

FAIRCHILD[Fairchild Semiconductor]
Part No. IRLR_U110A IRLRU110A IRLR110A IRLU110A IRLR110ATF IRLR110ATM IRLU110ATU
OCR Text Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.) IRLR/U110A BVDSS = 100 V...
Description 100V N-Channel Logic Level A-FET / Substitute of IRLU110
100V N-Channel Logic Level A-FET / Substitute of IRLR110
ADVANCED POWER MOSFET

File Size 254.12K  /  9 Page

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    IRLRU210A IRLU210A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRLRU210A IRLU210A
OCR Text Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 1.185 (Typ.) IRLR/U210A BVDSS = 200 V...
Description Advanced Power MOSFET

File Size 232.57K  /  7 Page

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    IRLRU220A IRLU220A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRLRU220A IRLU220A
OCR Text Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.609 (Typ.) IRLR/U220A BVDSS = 200 V...
Description Advanced Power MOSFET

File Size 219.06K  /  7 Page

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    IRLRU230A IRLU230A IRLR230A IRLR_U230A IRLR/U230A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRLRU230A IRLU230A IRLR230A IRLR_U230A IRLR/U230A
OCR Text Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.335 (Typ.) IRLR/U230A BVDSS = 200 V...
Description Advanced Power MOSFET

File Size 227.87K  /  7 Page

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