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Infineon Technologies A...
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| Part No. |
IPB65R125C7
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| OCR Text |
...65 0.125 - w v gs =10v, i d =8.9a, t j =25c v gs =10v, i d =8.9a, t j =150c gate resistance r g - 1 - w f =1mhz,opendrain table5...650vcoolmos?c7powertransistor ipb65r125c7 rev.2.0,2013-10-11 final data sheet table7rev... |
| Description |
Metal Oxide Semiconductor Field Effect Transistor
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| File Size |
1,750.38K /
15 Page |
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Tak Cheong Electronics ...
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| Part No. |
TFF4N65
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| OCR Text |
9a, 650v, 3.0 ? general description the n-channel mosfet is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. this advanced technology has been especially t... |
| Description |
N-Channel Power MOSFET 3.9a, 650v, 3.0Ω
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| File Size |
291.85K /
8 Page |
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it Online |
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Inchange Semiconductor ...
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| Part No. |
18N65
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| OCR Text |
...n-resistance v gs = 10v; i d = 9a 0.4 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds =650v; v gs = 0 250 a pdf pdffactory pro ... |
| Description |
Static Drain-Source On-Resistance
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| File Size |
41.38K /
2 Page |
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ZP Semiconductor
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| Part No. |
CJP08N65
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| OCR Text |
...e g fs v ds =50v, i d =3.9a 8.5 s dynamic characteristics (note 3) input capacitance c iss 1255 output capacitance c oss 135 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz ... |
| Description |
Plastic-Encapsulate MOSFETS
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| File Size |
542.49K /
2 Page |
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it Online |
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Jiangsu Changjiang Elec...
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| Part No. |
CJP08N65
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| OCR Text |
...e g fs v ds =50v, i d =3.9a 8.5 s dyn amic characteristics (note 3) input capacitan ce c iss 1255 output capacitance c oss 135 reverse transfer capacitanc e c rss v ds =25v,v gs =0v,f =1 mhz... |
| Description |
N-Channel Power MOSFET
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| File Size |
1,118.12K /
4 Page |
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it Online |
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