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VISAY[Vishay Siliconix]
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| Part No. |
2322596 2322592 2322593 2322594 2322595
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| OCR Text |
...AGE at STATED CURRENT V (V) 940 920 920 920 920 1000 1025 1025 1025 1025 1100 1120 1120 1120 1120 1200 1240 1240 1240 1240 1355 1355 1355 1500 1500 1500 1650 1815 I (A) 5.0 10.0 25.0 50.0 100.0 5.0 10.0 25.0 50.0 100.0 5.0 10.0 25.0 50.0 10... |
| Description |
Varistors
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| File Size |
264.09K /
18 Page |
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ZCOMM[Z-Communications, Inc]
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| Part No. |
CLV0975A
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| OCR Text |
...000 990 980 970 960 950 940 930 920 910 900 890 0 0.5 1 1.5 2 2.5 3 3.5 4
CLV0975A
PAGE 2
FREQUENCY (MHz)
85 25 -40
c c c
4.5
TUNING VOLTAGE (Vdc)
POWER CURVE, typ.
POWER OUTPUT (dBm)
3 2 1 0 -1 -2 -3 -4 909
25
... |
| Description |
VOLTAGE CONTROLLED OSCILLATOR
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| File Size |
66.29K /
2 Page |
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it Online |
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ZCOMM[Z-Communications, Inc]
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| Part No. |
CLV1000E
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| OCR Text |
...OWER OUTPUT (dBm)
25
c
920
940
960
980
1000
1020
1040
1060
1080
1100
FREQUENCY (MHz)
PHYSICAL DIMENSIONS
(c) Z-Communications, Inc.
Page 2
Printed in the U.S.A.
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| Description |
LOW COST - HIGH PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR
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| File Size |
65.05K /
2 Page |
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it Online |
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WJCI[WJ Communication. Inc.]
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| Part No. |
ECP052D_06 ECP052D ECP052D-G ECP052D-PCB900 ECP052D06
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| OCR Text |
... 840 +25C +85C -40C 860 880 900 920 940 0 -5 -10 -15 -20 -25 -30 -35 840 860
S11 vs. Frequency
0 -5 -10 S 2 2 (d B ) -15 -20 -25 -30 940 -35 840
S22 vs. Frequency
+25C +85C -40C 880 900 920
+25C +85C -40C 860 880 900 920 940
... |
| Description |
? Watt, High Linearity InGaP HBT Amplifier ? Watt, High Linearity InGaP HBT Amplifier
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| File Size |
365.58K /
4 Page |
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it Online |
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http:// EUPEC[eupec GmbH]
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| Part No. |
FZ1600R17KF6B2
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| OCR Text |
...40 mWs mWs Qr 220 460 As As IRM 920 1350 A A VF
min.
typ.
2,1 1,95
max.
2,5 2,3 V V
2(8)
FZ1600R17KF6B2
Technische Infor...1050 min. M1 AlN
17
mm
10
mm
275 5 Nm
M2
2 8 - 10
Nm Nm g
Mit dieser tech... |
| Description |
Hochstzulassige Werte / Maximum rated values
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| File Size |
88.86K /
8 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN152
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| OCR Text |
...960
60
20
940
40
920
20
900 - 40
0
40
80
120
0 800
850
900
950
1000 1050 1100
Ambient temperature Ta (C )
Wavelength (nm)
2
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| Description |
GaAs Infrared Light Emitting Diode
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| File Size |
35.81K /
2 Page |
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it Online |
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Panasonic Corporation PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN52
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| OCR Text |
...orward voltage
940
0.4
920
0 - 40
0
40
80
120
900 - 40
0
40
80
120
Ambient temperature Ta (C )
...1050 1100
10 -2 10
10 2
10 3
10 4
Wavelength
(nm)
Frequency f (kHz)
3
... |
| Description |
GaAs Infrared Light Emitting Diode
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| File Size |
43.76K /
3 Page |
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it Online |
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Panasonic Corporation PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN671
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| OCR Text |
...temperature Ta (C )
P -- Ta
920 IF = 50mA 100
Spectral characteristics
IF = 50mA Ta = 25C
Directivity characteristics
0 100 10 2...1050
Ambient temperature Ta (C )
Wavelength (nm)
2
... |
| Description |
GaAlAs Infrared Light Emitting Diode
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| File Size |
42.30K /
2 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LNA4801L
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| OCR Text |
...temperature Ta (C )
P -- Ta
920 IF = 50mA 100
Spectral characteristics
IF = 50mA Ta = 25C
Directivity characteristics
0 100 10 2...1050
Ambient temperature Ta (C )
Wavelength (nm)
2
... |
| Description |
GaAlAs Infrared Light Emitting Diode
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| File Size |
34.06K /
2 Page |
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it Online |
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