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  8-20v Datasheet PDF File

For 8-20v Found Datasheets File :: 43001    Search Time::1.781ms    
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    FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A

POWEREX[Powerex Power Semiconductors]
Fairchild Semiconductor
Part No. FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text ...3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 ...20V TC = 25C Pulse Test VGS = 20V 10V 5V 4.5V DRAIN CURRENT ID (A) 16 PD = 40W DR...
Description Fairchild Power Switch(FPS)
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 46.69K  /  4 Page

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    FS7KM-5

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-5
OCR Text ...3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 ...20V 10V 7V PD = 30W TC = 25C Pulse Test CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) ...
Description HIGH-SPEED SWITCHING USE

File Size 44.05K  /  4 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ... for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM...20V Dynamic Characteristics - TJ = 125C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    IRHF67230 IRHF63230

International Rectifier
Part No. IRHF67230 IRHF63230
OCR Text ... peak diode recovery dv/dt 4.8 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in/1.6...20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 45 v gs = ...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

File Size 201.32K  /  9 Page

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    UTC
Part No. BF422
OCR Text ...emitter ta=25 10 5 v ce =20v 0.8 collector current, ic (ma) 3 0.3 1 100 10 50 0 10 30 30 500 300 dc current gain, hfe 100 ta=25 common emitter v ce =10v ta=100 collector current, ic (ma) 3 -0.3 1 0.5 0.05 0.3 0.01 v ce(sat) -ic 10 30 0.1...
Description HIGH VOLTAGE TRANSISTOR

File Size 126.10K  /  3 Page

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    SPP1015

SYNC POWER Crop.
Part No. SPP1015
OCR Text ...=v gs ,i d =-250ua -0.35 -0.8 gate leakage current i gss v ds =0v,v gs =12v 100 na zero gate voltage drain current i dss v ds =-20v,v gs =0v -1 ua v ds =-20v,v gs =0v t j =55 -5 on-state drain current i ...
Description P-Channel Enhancement Mode MOSFET

File Size 149.15K  /  8 Page

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    PRHMB75E6

Nihon Inter Electronics Corporation
Part No. PRHMB75E6
OCR Text ...5 4 0.25 80 94 1 2 3 23 23 17 6 8 4-f ast en tab #110 t= 0.5 16 16 16 7 7 30 +1.0 - 0.5 23 label 00 ???`? ? ...20v 9v 8v 12v 15v 012345 0 25 50 75 100 125 150 collector to emitter voltage v ce (v) collector cu...
Description IGBT Module-Dual

File Size 240.40K  /  4 Page

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    SPP2345

SYNC POWER Crop.
Part No. SPP2345
OCR Text ... i d -3.5 a t a =70 -2.8 pulsed drain current i dm -10 a continuous source current(diode conduction) i s -1.6 a power dissipation t a =25 p d 1.25 w t a =70 0.8 operating junction temperature t j 150 stora...
Description P-Channel Enhancement Mode MOSFET

File Size 226.58K  /  8 Page

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    IR2110E6

IRF[International Rectifier]
Part No. IR2110E6
OCR Text ...-- -- 0.7 -- -- 125 180 5 15 -- 8.6 8.2 8.5 8.2 -- -- -- -- -- -- 1.8 3.8 6 8.3 1.2 0.1 50 230 340 30 40 1 9.7 9.4 9.6 9.4 -- -- 3.3 6.8 10 13.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.7 3.6 5.7 7.9 1.5 0.1 250 5...
Description HIGH AND LOW SIDE DRIVER

File Size 306.76K  /  14 Page

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