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				MACOM[Tyco Electronics]
Part No.	AM50-0011 AM50-0011SMB AM50-0011TR AM50-0011TR3000
OCR Text	...equency MHz 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 Mag 0.48 0.51 0.53 0.54 0.57 0.58 0.59 0.60 0.61 0.63 0.64 0.64 0.66 0.66 0.67 0.68 0.68 0....
Description	Circular Connector; No. of Contacts:56; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No LJT 128C 128#22D SKT WALL RECP Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No High Dynamic Range LNA 800 - 1000 MHz
File Size	111.64K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	... Volts Amps 500 77 308 30 40 700 5.6 -55 to 150 300 77 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source...2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 P...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50JVR
OCR Text	... Volts Amps 500 77 308 30 40 700 5.6 -55 to 150 300 77 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power ...2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
File Size	70.86K / 4 Page	View it Online	Download Datasheet

				http:// ADPOW[Advanced Power Technology]
Part No.	APT8015JVFR APT8015
OCR Text	... Volts Amps 800 44 176 30 40 700 5.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source...2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 P...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 44A 0.150 Ohm
File Size	77.92K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8015 APT8015JVR
OCR Text	... Volts Amps 800 44 176 30 40 700 5.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power ...2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 ...
Description	POWER MOS V 800V 44A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	75.34K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8018JN
OCR Text	...6 21 19 70 13 14000 2000 690 700 110 265 40 40 105 25 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Ri...2500 70 13 pF in-lbs 1 Repetitive Rating: Pulse width limited by maximum junction temperature....
Description	POWER MOS IV 800V 40A 0.18 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.06K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FMG1G100US60H
OCR Text	... 2.4 0 100 200 300 400 500 600 700 0.01 T C = 25 IGBT : DIODE : 1E-3 10 -5 0.1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, V CE [V] Rectangular Pulse Duration [sec] Fi...
Description	IGBT Molding Type Module
File Size	660.15K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FMG1G100US60L
OCR Text	... 2.4 0 100 200 300 400 500 600 700 0.01 T C = 25 IGBT : DIODE : 1E-3 10 -5 0.1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, V CE [V] Rectangular Pulse Duration [sec] Fi...
Description	IGBT Molding Type Module
File Size	660.41K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FMG1G50US60L FMG1G50US60
OCR Text	... 5.9 0 100 200 300 400 500 600 700 0.01 T C = 25 IGBT : DIODE : 1E-3 10 -5 0.1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, V CE [V] Rectangular Pulse Duration [sec] Fi...
Description	Molding Type Module
File Size	598.46K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FMG1G50US60 FMG1G50US60H
OCR Text	... 5.9 0 100 200 300 400 500 600 700 0.01 T C = 25 IGBT : DIODE : 1E-3 10 -5 0.1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, V CE [V] Rectangular Pulse Duration [sec] Fi...
Description	Molding Type Module
File Size	624.70K / 9 Page	View it Online	Download Datasheet

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