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  600v 5a Datasheet PDF File

For 600v 5a Found Datasheets File :: 3863    Search Time::1.078ms    
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    MUBW15-12A6

IXYS Corporation
Part No. MUBW15-12A6
OCR Text ...0 2.5 Qr 2.0 1.5 1.0 mC VVJ= 600v R T = 100C 50 TVJ= 100C A VR = 600v IRM IF= 30A IF= 15a IF= 7.5a 40 30 20 IF= 30A IF= 15a IF= 7.5a 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt Forward current I...
Description Converter - Brake - Inverter Module (CBI1)

File Size 292.53K  /  8 Page

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    APT6010JFLL

Microsemi Corporation
Part No. APT6010JFLL
OCR Text 600v 47A 0.100 S D POWER MOS 7 (R) R FREDFET G S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enha...5a) Ohms A nA Volts 6-2006 050-7049 Rev E Zero Gate Voltage Drain Current (VDS = 600v, VGS = ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 259.09K  /  5 Page

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    APT75GP120JDQ3

Advanced Power Technology
Part No. APT75GP120JDQ3
OCR Text ...25V f = 1 MHz Gate Charge VCE = 600v I C = 75a TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC 7035 460 80 7.5 320 50 140 30...5a 2 IC = 37.5a 2.0 1 1.0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 8 10 12 14 16 ...
Description POWER MOS 7 IGBT

File Size 450.95K  /  9 Page

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    APT75GN60LDQ3 APT75GN60LDQ3G

ADPOW[Advanced Power Technology]
Part No. APT75GN60LDQ3 APT75GN60LDQ3G
OCR Text 600v *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's ha...5a VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.0 2.5...
Description IGBT

File Size 431.20K  /  9 Page

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    APT75GN60BG APT75GN60B

Advanced Power Technology
Part No. APT75GN60BG APT75GN60B
OCR Text 600v *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's ha...5a VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.0 2.5...
Description IGBT

File Size 396.59K  /  6 Page

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    APT75DQ60B APT75DQ60BG APT75DQ60S APT75DQ60SG

Microsemi, Corp.
Advanced Power Technology
Part No. APT75DQ60B APT75DQ60BG APT75DQ60S APT75DQ60SG
OCR Text 600v 75a APT75DQ60B APT75DQ60S APT75DQ60BG* APT75DQ60SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY REC...5a 0.5 1 1.5 2 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage...
Description Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 75; VR (V): 600; trr (nsec): 29; VF (V): 2; Qrr (nC): 650; 75 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 128.21K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT15GT120BR APT15GT120BRG
OCR Text ...25V f = 1 MHz Gate Charge VCE = 600v I C = 15a TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC 1070 100 65 10 105 10 60 45 1...5a IC = 7.5a VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 10 11 12 13 14 15 16 VGE, GATE-TO...
Description Thunderbolt IGBT

File Size 394.76K  /  6 Page

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    APT15DQ60KG APT15DQ60K

ADPOW[Advanced Power Technology]
Part No. APT15DQ60KG APT15DQ60K
OCR Text 600v 15a APT15DQ60K APT15DQ60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (K) PRO...5a TJ = -55C 0 TJ = 25C 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current ...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 119.33K  /  4 Page

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    STB9NK60ZD06 STP9NK60ZD STB9NK60ZD STF9NK60ZD

STMicroelectronics
Part No. STB9NK60ZD06 STP9NK60ZD STB9NK60ZD STF9NK60ZD
OCR Text 600v - 0.85 - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMeshTM Power MOSFET General features Type STB9NK60ZD STF9NK60ZD STP9NK60ZD VDSS...5a Table 5. Symbol gfs (1) Ciss Coss Crss COSS eq(2) Qg Qgs Qgd Dynamic Parameter Forward tr...
Description N-channel 600v - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET
N-channel 600v - 0.85楼? - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh垄芒 Power MOSFET

File Size 349.11K  /  16 Page

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    IPA60R520E6 IPP60R520E6

Infineon Technologies AG
Part No. IPA60R520E6 IPP60R520E6
OCR Text 600v coolmos ? e6 power transistor ipx60r520e6 m o s f e t metal oxide semiconductor field effect transistor drain pin 2 gate pin 1 source...5a, v gs =0 to 10 v gate to drain charge q gd - 12 - gate charge total q g - 23.4 - gate plateau vol...
Description 600v CoolMOS E6 Power Transistor

File Size 1,261.88K  /  16 Page

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For 600v 5a Found Datasheets File :: 3863    Search Time::1.078ms    
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