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Icemos Technology
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| Part No. |
ICE60N199
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| OCR Text |
...max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.17 typ q g v ds =480v 62nc typ icemos and its sister...10a 520 mj avalanche current, repetitive i ar limited by t j max 10 a mosfet d ... |
| Description |
Enhancement Mode MOSFET
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| File Size |
780.66K /
9 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SIGC06T60G Q67050-A4344-A101 SIGC06T60G05
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| OCR Text |
600v Trench & Field Stop technology * low VCE(sat) * low turn-off losses * short tail current * positive temperature coefficient * easy para...10a
Die Size 2.44 x 2.42 mm2
Package sawn on foil
Ordering Code Q67050A4344-A101
MECHANI... |
| Description |
IGBT3 Chip
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| File Size |
72.09K /
4 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SIGC12T60NC Q67041-A4688-A001
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| OCR Text |
600v NPT technology * 100m chip * positive temperature coefficient * easy paralleling
C
This chip is used for: * IGBT Modules Applicatio...10a
Die Size 3.5 x 3.5 mm2
Package sawn on foil
Ordering Code Q67041-A4688A001
MECHANICA... |
| Description |
IGBT Chip in NPT-technology
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| File Size |
65.79K /
4 Page |
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it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE10N60
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| OCR Text |
...max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.28 typ q g v ds =480v 41nc typ icemos and its sister...10a, t j =125 o c 50 v/ns gate source voltage v gs static 20 v ac ( f >1hz) 30 ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
551.81K /
9 Page |
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it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE10N60FP
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| OCR Text |
...max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.28 typ q g v ds =480v 41nc typ icemos and its sister...10a, r g =4 ? (external) - 6 - ns rise time t r - 3.5 - turn - off delay time... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
517.36K /
9 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKB06N60HS
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| OCR Text |
...ove 30 kHz * NPT-Technology for 600v applications offers: - parallel switching capability - moderate Eoff increase with temperature - very t...10a 8s 15s
IC, COLLECTOR CURRENT
20A
IC, COLLECTOR CURRENT
TC=80C
50s 1A 200s 1ms
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| Description |
High Speed IGBT in NPT-technology
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| File Size |
353.14K /
14 Page |
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it Online |
Download Datasheet |
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