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  6-sc-70 Datasheet PDF File

For 6-sc-70 Found Datasheets File :: 16624    Search Time::1.235ms    
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    2SJ534

HITACHI[Hitachi Semiconductor]
Part No. 2SJ534
OCR Text ...l Output Characteristics -10 V -6 V -4 V Pulse Test -3 V Typical Transfer Characteristics -20 V DS = -10 V Pulse Test I D (A) -12 ...SC-72 EIAJ -- JEDEC 8 14.0 1.0 1.2 0.2 1.4 0.2 12.0 0.3 4.45 0.3 17.0 0.3 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.11K  /  9 Page

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    2SJ539

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SJ539
OCR Text ...1MHz VGS = -10V, I D = -5A RL = 6 Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Note: 4. Pulse test t rr ...SC-46 EIAJ -- JEDEC 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.99K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ...bol Min -60 20 -- -- -1.0 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 0.105 11 850 420 110 12 75 125 75 -1.1 70 Max -- -- ...SC-46 EIAJ -- JEDEC 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text ...l Output Characteristics -10 V -6 V -4 V Pulse Test -3 V 0 Ta = 25 C 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typ...SC-46 EIAJ -- JEDEC 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ547

HITACHI[Hitachi Semiconductor]
Part No. 2SJ547
OCR Text ...1MHz VGS = -10V, I D = -5A RL = 6 Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Note: 4. Pulse test t rr ...SC-72 EIAJ -- JEDEC 8 14.0 1.0 1.2 0.2 1.4 0.2 12.0 0.3 4.45 0.3 17.0 0.3 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.45K  /  9 Page

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    2SJ548

HITACHI[Hitachi Semiconductor]
Part No. 2SJ548
OCR Text ...bol Min -60 20 -- -- -1.0 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 0.105 11 850 420 110 12 75 125 75 -1.1 70 Max -- -- ...SC-72 EIAJ -- JEDEC 8 14.0 1.0 1.2 0.2 1.4 0.2 12.0 0.3 4.45 0.3 17.0 0.3 ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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    2SJ576

http://
HITACHI[Hitachi Semiconductor]
Part No. 2SJ576
OCR Text ...gned to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this docu...
Description Silicon P Channel MOS FET High Speed Switching

File Size 26.18K  /  5 Page

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    2SJ586

HITACHI[Hitachi Semiconductor]
Part No. 2SJ586
OCR Text ...S = -4 V , I D = -50 mA) R DS = 6.0 typ. (VGS = -2.5 V , ID = -50 mA) * 2.5 V gate drive device. * Small package (CMPAK) Outline CMPAK ...SC-70 - 7 2SJ586 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of H...
Description Silicon P Channel MOS FET High Speed Switching

File Size 40.34K  /  8 Page

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    2SK1104

PANASONIC[Panasonic Semiconductor]
Part No. 2SK1104
OCR Text ... 7 1.3 1.5 -3.5 min 0.2 typ max 6 -10 Unit mA nA V V mS pF pF pF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA)...
Description Silicon N-Channel Junction FET

File Size 30.22K  /  2 Page

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    2SK2380

PANASONIC[Panasonic Semiconductor]
Part No. 2SK2380
OCR Text ...0 80 100 120 140 160 0 0 2 4 6 8 10 12 0 -1.2 0 0.4 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | VGS 1.2 | Yfs | ID Forward transfer admittance |Yfs| (mS) ...
Description Silicon N-Channel Junction FET

File Size 30.65K  /  2 Page

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