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Advanced Power Electron...
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| Part No. |
AP92U03GMT-HF-16
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| OCR Text |
...- 4 m v gs =4.5v, i d =20a - - 6 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v...30a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 33 - ns q rr reverse rec... |
| Description |
SO-8 Compatible with Heatsink
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| File Size |
48.55K /
5 Page |
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it Online |
Download Datasheet
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Advanced Power Electron...
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| Part No. |
AP92U03GJ-HF AP92U03GH-HF
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| OCR Text |
...3.8 m v gs =4.5v, i d =30a - - 6.5 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =40a - 70 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua i gss gate-so... |
| Description |
Fast Switching Characteristic
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| File Size |
64.50K /
5 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
AP73T02GH-HF-16
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| OCR Text |
...cteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0 ...30a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j ... |
| Description |
Fast Switching Characteristic
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| File Size |
48.32K /
5 Page |
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it Online |
Download Datasheet
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Price and Availability
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