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5.8w channel Datasheet PDF File

For 5.8w channel Found Datasheets File :: 696 Search Time::4.797ms
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				STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] Solid States Devices, Inc ST Microelectronics
Part No.	PD55015-PD55015S XPD55015S PD55015 PD55015S XPD55015
OCR Text	...IGURATION * POUT = 15 W with 13.5 dB gain @ 500 MHz / 12.5V * NEW RF PLASTIC PACKAGE DESCRIPTION The PD55015 is a common source N-channel...8W 10 VDD =12.5V Pin=0.8W 8 0 200 400 600 800 1000 30 0 200 400 600 800 1000 Idq, BIA...
Description	RF POWER TRANSISTORS The LdmoST Plastic FAMILY RF POWER TRANSISTORS The LdmoST Plastic FAMILY 射频功率晶体管LdmoST塑料家庭
File Size	119.00K / 10 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC39V3436_04 MGFC39V3436 MGFC39V343604
OCR Text	...3.6GHz High power gain GLP = 12.5 dB (TYP.) @ f=3.4~3.6GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=3.4~3.6GHz Low distortion [ ...8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 ...
Description	3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
File Size	180.17K / 2 Page	View it Online	Download Datasheet

				TriQuint Semiconductor, Inc.
Part No.	AP513-PCB
OCR Text	...m, www.triquint.com page 1 of 5 june 2006 ap513 dcs-band 8w hbt amplifier module product information product features ? 1805 ? 1880 mhz ? 30 db gain ? -64 dbc acpr @ 28 dbm cdma2k 7fa power ? +39 dbm p1db ? +12 v sin...
Description
File Size	311.82K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC39V3436 C393436
OCR Text	...atio communication 4 . 0 / + 5 . 4 17.0 +/-0.2 6 . 1 2 . 0 QUALITY GRADE IG 12.0 RECOMMENDED BIAS CONDITIONS VDS = 10 (V...8W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB,GLP vs. f OUTPUT POWER P...
Description	3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
File Size	132.12K / 2 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	PD55008L-E
OCR Text	.... . . . . . . . . . . . . . . . 5 4 common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.1 pd...8w, f = 500mhz 17 19 db h d v dd = 12.5v, i dq = 150ma, p out = 8w, f = 500mhz 55 63 % load misma...
Description	RF POWER transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs
File Size	167.97K / 15 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	DB-54008L-830
OCR Text	.... . . . . . . . . . . . . . . . 5 5 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....8w 7.9 0.3 db nd @ p out = 8w 56 - 59 % h2 2 nd harmonic @ p out = 8w -51 / -54 dbc h3 3 r...
Description	800 MHz - 830 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER ROHS COMPLIANT PACKAGE
File Size	360.70K / 15 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC39V4450A_04 MGFC39V4450A MGFC39V4450A04
OCR Text	5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metalceramic package guarantees ...
Description	4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
File Size	180.23K / 2 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	LET9120
OCR Text	.... october 2010 doc id 15509 rev 5 1/11 11 let9120 rf power transistor from the ldmost family of n-channel enhancemen t-mode lateral mosfets ...8w-130jb venkel 13 , 1/8 w surface mount chip resistor r2, r4 2 cr1206-8w-122jb venkel 1.2 k , 1/...
Description	120W 32V HF to 2GHz LDMOS TRANSISTOR in push-pull package RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
File Size	182.39K / 11 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC39V5964A_04 MGFC39V5964A MGFC39V5964A04
OCR Text	5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic package guar...
Description	5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
File Size	180.02K / 2 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC39V7785A_04 MGFC39V7785A
OCR Text	...lly designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability. OUTLINE DRA...8W (TYP.) @ f=7.7~8.5GHz High power gain GLP = 7.5 dB (TYP.) @ f=7.7~8.5GHz High power added efficie...
Description	7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET
File Size	180.17K / 2 Page	View it Online	Download Datasheet

For 5.8w channel Found Datasheets File :: 696 Search Time::4.797ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |