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  5-ghz Datasheet PDF File

For 5-ghz Found Datasheets File :: 27693    Search Time::2.266ms    
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    BFS17A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFS17A
OCR Text ... 70 C; note 1 IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C IC = 14 mA; VCE = 10 V; f = 800 MHz IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = ...GHz dB dB mV UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134)...
Description NPN 3 GHz wideband transistor

File Size 43.58K  /  6 Page

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    BFS17H BFS17L

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. BFS17H BFS17L
OCR Text ...C P tot T j:T stg VALUE 25 15 2.5 50 25 330 -55 to +150 UNIT V V V mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Coll...GHz GHz pF 1.5 2.0 4.5 -45 pF pF dB dB I C=2.0mA, V CE=1.0V I C=2.0mA, V CE=1.0V I C=25mA, V CE=1.0V...
Description NPN RF Transistor
SOT23 NPN SILICON PLANAR RF TRANSISTORS

File Size 42.87K  /  2 Page

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Part No. AC117A-6-41 AC115A-1-32 AC119A-7-22 AC115A-5-11 AF115A-5-11
OCR Text ... 1 watt @ 54c. 200 watts peak (5 sec pulse width; 0.5% duty cycle) power coefficient: < 0.005/db/db/watt temperature coefficient: < 0.0...ghz) repeatability: better than 0.05 db across frequency band for switch life. switch life: over 1...
Description 0 MHz - 4000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 0.3 dB INSERTION LOSS-MAX
0 MHz - 18000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 0.5 dB INSERTION LOSS-MAX

File Size 148.06K  /  3 Page

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    BFS17R BFS17W BFS17

Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
Vishay Siliconix
Part No. BFS17R BFS17W BFS17
OCR Text ...O IC Ptot Tj Tstg Value 25 15 2.5 25 200 150 -55 to +150 Unit V V V mA mW C C Tamb 60 C Maximum Thermal Resistance Tamb = 25_C, unle...GHz GHz GHz pF pF pF dB dB dB mV 23 dBm Document Number 85038 Rev. 4, 20-Jan-99 www.vish...
Description Silicon NPN Planar RF Transistor
From old datasheet system

File Size 148.66K  /  10 Page

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    BFS17S Q62702-F1645

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS17S Q62702-F1645
OCR Text ...ation Package 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Maximum Ratings of any single Transistor Parameter Collector-emitter voltage Co...GHz IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacita...
Description NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
From old datasheet system

File Size 55.96K  /  5 Page

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    BFS17W

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFS17W
OCR Text ...- - - - -65 - MIN. MAX. 25 15 2.5 50 300 +150 175 UNIT V V V mA mW C C PARAMETER collector-base voltage collector-emitter voltage DC collect...GHz pF pF C UNIT V V mA mW 1995 Sep 04 2 Philips Semiconductors Product specification ...
Description NPN 1GHz wideband transistor(NPN 1G赫兹 宽带晶体
NPN 1 GHz wideband transistor

File Size 46.15K  /  6 Page

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    BFS17

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFS17
OCR Text ... 70 C; note 1 IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj = 25 C IC = 2 mA; VCE = 5 V; RS = 50 ; f = 500 MHz; Tj = 25 C open emitter open base CO...GHz dB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VC...
Description NPN 1 GHz wideband transistor

File Size 37.46K  /  6 Page

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    LLE16045X

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. LLE16045X
OCR Text ...essional applications between 1.5 GHz and 1.8 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. 2 Top view handbook, 4 columns ...
Description NPN microwave power transistor

File Size 75.36K  /  12 Page

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