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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FDPF13N50FT FDP13N50F
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| OCR Text |
... 250A, Referenced to 25oC VDS = 400v, TC = 125oC VGS = 20V, VDS = 0V VDS = 500V, VGS = 0V 500 0.7 10 100 100 V V/oC A nA
On Characteristi...12a, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 12a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C... |
| Description |
500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
N-Channel MOSFET 500V, 12a, 0.54ヘ
N-Channel MOSFET 500V, 12a, 0.54Ω
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| File Size |
574.45K /
9 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SKA06N60
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| OCR Text |
...g energy e ts t j =25 c, v cc =400v, i c =6a, v ge =0/15v, r g =50 ? , energy losses include ? tail ? and diode reverse recovery. - 0.215 ...12a 14a 16a 18a 20a -55 c +150 c t j =+25 c v ce(sat) , collector - emitter saturation voltag... |
| Description |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
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| File Size |
235.00K /
13 Page |
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it Online |
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STMicroelectronics N.V.
ST Microelectronics
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| Part No. |
STTH12R06 STTH12R06G-TR STTH12R06DIRG
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| OCR Text |
... = 125c i f = 12a v r = 400v di f /dt = -200 a/s 7.0 8.4 a s factor softness factor 0.2 qrr reverse recovery charges 180 nc t fr forward recovery time t j = 25c i f = 12a di f /dt = 96 a/s v fr = 1.1 x v fmax 200 ns v fp f... |
| Description |
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER 透平2超快高压整流
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| File Size |
114.66K /
9 Page |
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it Online |
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STMicro
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| Part No. |
STTA1206DI STTA1206D 3167
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| OCR Text |
... =-50A/s VR =30V Tj = 125C VR = 400v dIF/dt = -96 A/s dIF/dt = -500 A/s Tj = 125C VR = 400v dIF/dt = -500 A/s IF =12a 7.5 16 IF =12a 0.45 Min Typ 28 55 A Max Unit ns
IRM
S factor
TURN-ON SWITCHING Symbol t fr Parameter Forward reco... |
| Description |
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
From old datasheet system
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| File Size |
87.49K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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