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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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Part No. |
aPTGT200H120G
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Description |
Full - Bridge Fast trench Field Stop igbt Power Module 280 a, 1200 V, N-CHaNNEL igbt
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File Size |
247.84K /
5 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
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Part No. |
FGPF30N30TTU
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Description |
300V, 30a pdp trench igbt; Package: to-220F; No of Pins: 3; Container: Rail 300 V, N-CHaNNEL igbt, to-220aB
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File Size |
570.60K /
7 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M57161L-01
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Description |
integrated Gate Bipolar Transistor (igbt) Modules: 250V HYBRID IC FOR DRIVinG trench-GaTE igbt
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File Size |
112.05K /
6 Page |
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it Online |
Download Datasheet |
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inFinEON[infineon Technologies aG]
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Part No. |
IKW20N60T IKP20N60T IKB20N60T
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Description |
600V & 1200V igbt for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... igbt in trench and Fieldstop technology with soft/fast recovery anti-parallel EmCon HE diode igbt in trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
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File Size |
431.57K /
15 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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