30a 800v 1000v pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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30a 800v 1000v Datasheet PDF File

For 30a 800v 1000v Found Datasheets File :: 263 Search Time::6.328ms
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				Infineon Technologies AG
Part No.	IHW30N100T IHW30N100T08
OCR Text	...ns Type IHW30N100T VCE 1000v IC 30a VCE(sat),Tj=25C 1.55V Tj,max 175C Marking H30T100 Package PG-TO-247-3 G E PG-TO-247-3 Maximu...800v 5V 100pF Coss Crss 0V 0nC 50nC 100nC 150nC 200nC 250nC 10pF 0V ...
Description	Soft Switching Series
File Size	311.94K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PG42UD-EPBF
OCR Text	... v ce(on) typ. = 1.7v @ i c = 30a e g n-channel c ? ? insulated gate bipolar transistor features ?? low v ce (on) trench igbt techno...800v, vp 1000v rg = 10 ? , v ge = +20v to 0v erec reverse recovery energy ...
Description	1000v UltraFast Co-Pack IGBT in a TO-247 package
File Size	631.42K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHY30N160R2
OCR Text	... C G E VCE 1600V IC 30a VCE(sat),Tj=25C 1.8V Tj,max 175C Marking H30R1602 Package PG-TO247HC-3 Symbol VCE IC V...800v 900V 1000v 1100V TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a func...
Description	TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
File Size	609.07K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IHW30N100R
OCR Text	...ns Type IHW30N100R VCE 1000v IC 30a VCE(sat),Tj=25C 1.5V Tj,max 175C Marking H30R100 Package PG-TO-247-3-21 G E PG-TO-247-3-21 M...800v c, CAPACITANCE 200V 100pF Coss 5V Crss 0V 0nC 50nC 100nC 150nC...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	367.51K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IHW30N100T
OCR Text	...ns Type IHW30N100T VCE 1000v IC 30a VCE(sat),Tj=25C 1.55V Tj,max 175C Marking H30T100 Package PG-TO-247-3-21 G E PG-TO-247-3-21 ...800v 1nF 5V 100pF Coss Crss 0V 0nC 50nC 100nC 150nC 200nC 250nC 10pF ...
Description	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
File Size	356.94K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW30N160R2
OCR Text	...260 V W C A Unit V VCE 1600V IC 30a VCE(sat),Tj=25C 1.8V Tj,max 175C Marking H30R1602 Package PG-TO-247-3 C G E PG-TO-247-3 ICp...800v 900V 1000v 1100V TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a func...
Description	TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
File Size	389.66K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKW07N12008
OCR Text	...hz 100khz 0a 5a 10a 15a 20a 25a 30a 35 a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a dc 1ms 200 s 50 s 1...800v, v ge = +15v/0v, r g = 47 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	330.96K / 13 Page	View it Online	Download Datasheet

				Vishay Semiconductors TE Connectivity, Ltd. International Rectifier
Part No.	ST303C04CFL0 ST303C04CFN0 ST303C08CFL0 ST303C08CFN0 ST303C10CFK0 ST303C10CFJ0
OCR Text	..., TJ = TJ max. T J = 25C, I T > 30a T J = 25C, VA = 12V, Ra = 6, IG = 1A V T(TO)1 Low level value of threshold High level value of for...800v devices; t = 15 to 30s for 1000 to 1200V devices. Blocking Parameter dv/dt IRRM IDRM Maxim...
Description	Silicon Controlled Rectifier, 1180 A, 1000 V, SCR, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3 MAX II CPLD 1270 LE 256-FBGA 400V 1180A逆变晶闸管采用TO - 200AB（电子北辰）封装 Cyclone II FPGA 35K FBGA-672 800v180A逆变晶闸管采用TO - 200AB（电子北辰）封装 400V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package 800v 1180A Inverter Thyristor in a TO-200AB (E-Puk) package 1000v 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
File Size	169.26K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGP02N12007 SGP02N120 SGD02N120 SGI02N120
OCR Text	...CURRENT 11V 12V 13V 14V 15V 30a 20s 15s 20A 10s 10A 5s 0s 10V 0A 10V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (...
Description	Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
File Size	375.94K / 13 Page	View it Online	Download Datasheet

For 30a 800v 1000v Found Datasheets File :: 263 Search Time::6.328ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |