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SamHop Microelectronics...
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| Part No. |
STK400
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| OCR Text |
3 5.2 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics n-channel enhancement mode field effect transistor ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
93.31K /
7 Page |
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SamHop Microelectronics...
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| Part No. |
STK600
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| OCR Text |
... c oss 17 pf c rss 8.8 pf q g 6.3 nc 8.6 42 11 t d(on) 1.56 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =30v i d =0.40a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
95.68K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STK900
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| OCR Text |
3.16 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics n-channel enhancement mode field effect transistor a...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
95.54K /
7 Page |
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it Online |
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Murata
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| Part No. |
LQH31MN2R7J03
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| OCR Text |
...r general use wire wound type 2.3 0.2 1.8 0.2 1.6 0.2 1.6 0.2 3.2 0.3 0.7 min. 0.7 min. 0.7 min. (in mm) chip inductor (chip coil) ...6ohm 30% 35 10mhz 60mhz lqh31mn1r8k03 p 1.8 h 10% 1mhz 150ma 1.6ohm 30% 35 10mhz 60mhz lqh31mn2r... |
| Description |
Chip Inductor
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| File Size |
78.32K /
3 Page |
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SamHop Microelectronics...
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| Part No. |
STP656F
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| OCR Text |
...a 17.7 t c =70 c t c =70 c 13.3 w a a o
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) v g fs s c iss pf c oss pf c rss pf...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
118.97K /
7 Page |
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it Online |
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SamHop
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| Part No. |
STM8362
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| OCR Text |
...-21 20 p-channel t c =70 c a 5.3 -4.6 1.28 w t c =70 c c/w 30 36 ver 1.1 so-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 green prod...6ohm total gate charge rise time turn-off delay time v ds =20v,i d =6.6a,v gs =10v fall time turn-on... |
| Description |
Dual Enhancement Mode Field Effect Transistor
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| File Size |
152.02K /
11 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STM8820
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| OCR Text |
...ield effect transistor so-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 suface mount package. ver 1.0 esd protected.
symbol min typ ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v,i d =0.7a... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
101.48K /
7 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STD417S
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| OCR Text |
...tion-to-ambient r ja t c =25 c 3 c/w thermal resistance, junction-to-case r jc a t c =70 c -34.4 t c =70 c w 42 a a 225 green product
s...6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-21.5a,v gs =-10v fall time tur... |
| Description |
P-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
123.15K /
8 Page |
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SamHop Microelectronics...
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| Part No. |
STUD40N01
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| OCR Text |
...ratings v gs =0v,i s =5a 0.75 1.3 v notes v ds =50v,i d =20a,v gs =10v a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. _ _ 2 2.8 4 36 ver 1.0
stu/d40n01 ver 1.0 www.samhop.com.... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
103.61K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD419A
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| OCR Text |
...tion-to-ambient r ja t c =25 c 3 c/w thermal resistance, junction-to-case r jc a t c =70 c -42 t c =70 c w 42 a a 289 green product esd p...6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-24a,v gs =-10v fall time turn-... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
121.15K /
8 Page |
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it Online |
Download Datasheet |
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