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3.3-3.8ghz Datasheet PDF File

For 3.3-3.8ghz Found Datasheets File :: 1063 Search Time::6.109ms
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				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF7168C 7168CT_N
OCR Text	...RES - Low voltage operation Vd=3.2V - High output power Po=33dBm (typ.) @1710~1785MHz Po=33dBm (typ.) @1850~1910MHz - High efficiency Id=1250mA (typ. ) @Po=33dBm - Small size 6.1x7.0x1.10mm - Surface mount package - 2 Stage Amplifier - Ext...
Description	UHF BAND GaAs POWER AMPLIFIER From old datasheet system
File Size	75.54K / 12 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SBFP405B
OCR Text	... [SBFP405B] 0.35 0.2 0.15 0.05 3 0.15 4 0.25 Low noise : NF=1.25dB typ (f=1.8GHz). High cut-off frequency : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=18dB typ (f=1.8GHz). Ultraminiature (1006 size) and thin (0.5...
Description	UHF to C Band Low-Noise Amplifier Osc. Applications
File Size	21.36K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB420 BGB420E6327
OCR Text	...t * Typical supply voltage: 1.4-3.3V * SIEGET(R)-25 technology Bias,4 Bias C,3 Description SIEGET(R)-25 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according ...
Description	Active Biased Transistor Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 MMIC, LNA
File Size	436.18K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB540
OCR Text	...oscillators Bias,4 Bias C,3 Description SIEGET(R)-45 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias . B,1 E,2 ESD: Electrostati...
Description	Active Biased RF Transistor Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343
File Size	95.55K / 10 Page	View it Online	Download Datasheet

				Fujitsu Component Limited. Fujitsu Media Devices Limited
Part No.	FMM5017VF
OCR Text	...Typ. Max. ~ 29.0 20.0 1.0 2:1 2.3:1 2.5 700 15 14.5 1.5 2.3:1 3:1 1000 20 Unit GHz dBm dB dB V mA mA Edition 1.1 August 1999 1 FMM5017VF GaAs MMIC OUTPUT POWER vs. FREQUENCY VDD=10V VGG=-5V P1dB OUTPUT POWER vs. INPUT POWER...
Description	GaAs MMIC From old datasheet system
File Size	86.68K / 4 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD.
Part No.	FMM5057VF
OCR Text	...vs. FREQUENCY VDD=10V, VGG=-5V 3 2.5 INPUT OUTPUT VDD=10v,VGG=-5v 7.1GHz 7.7GHz 8.5GHz -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 IM3 VSWR 2 1.5 1 0.5 0 IM5 20 25 2-tone total Pout[dBm] 30 6.5 7 7.5 8 8...
Description	14 POS DUAL ROW SOCKET 7.1-8.5GHz Power Amplifier MMIC From old datasheet system
File Size	296.99K / 8 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FPD1500SOT89
OCR Text	...or best IP3 at 50% IDSS VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 1.5 mA IGS = 1.5 mA IGD = 1.5 mA 0.7 12 12 375 42 465 750 400 1 1.0 16 16 15 1.3 550 mA mA mS A V V V 38 1.2 40 dBm 1...
Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
File Size	403.26K / 11 Page	View it Online	Download Datasheet

				Hittite Microwave Corpo... Hittite Microwave Corporation
Part No.	HMC121G8
OCR Text	... Min. Typ. 1.5 2 30 15 10 3 6 +10 -2 +25 +10 Max. 3.0 3.5 Units dB dB dB dB dB ns ns dBm dBm dBm dBm Input Power for 0.25dB Comp. ( 0.5 - 8GHz) Input Third Order Intercept (two - 8 dBm signals) 12 Elizabeth Drive, Chelms...
Description	GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 8 GHz
File Size	103.43K / 6 Page	View it Online	Download Datasheet

				Pericom Technology ETC[ETC] PERICOM[Pericom Semiconductor Corporation]
Part No.	PI7C8152A PI7C81552A PI7C81552 PI7C8152
OCR Text	...ement Interface Specification ! 3.3V and 5V signaling environments ! Concurrent primary and secondary bus operations ! 66MHz support Memory Buffer Architecture ! Dynamic Prefetching Control ! Posted memory write commands in each direction !...
Description	ENHANCED 2- PORT TO PCI BRIDGE INTEL 21152 COMPORISON ENHANCED 2-PORT PCI TO PCI BRIDGE INTEL 21152 COMPARISON
File Size	116.21K / 3 Page	View it Online	Download Datasheet

				Mitel Semiconductor MITEL[Mitel Networks Corporation]
Part No.	SP8855 SP8855E
OCR Text	...nal Products IC Hanbook, HB2480-3.0 DS4239 - 3.0 March 1999 The SP8855E is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other devices in the se...
Description	2.8GHz Parallel Load Professional Synthesiser MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
File Size	168.71K / 14 Page	View it Online	Download Datasheet

For 3.3-3.8ghz Found Datasheets File :: 1063 Search Time::6.109ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |