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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S72PHC-8 MH16S72PHC-10 MH16S72PHC-7
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| OCR Text |
...
(Component SDRAM)
6.0ns(CL=3) 6.0ns(CL=3) 8.0ns(CL=3)
Back side
Front side
Utilizes industry standard 8M x 16 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP 168-pin (84-pin dual in-line package)
124pin 125pin
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| Description |
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
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| File Size |
588.26K /
55 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S72PJB-8 MH16S72PJB-7 B99019
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| OCR Text |
...
100MHz 100MHz
6ns (CL = 2, 3) 6ns (CL = 3)
Utilizes industry standard 16M X 8 Synchronous DRAMs in TSOP package , industry standard Resistered buffer in TSSOP package and industry standard PLL in TSSOP package Single 3.3V +/- 0.3V s... |
| Description |
From old datasheet system
1207959552-BIT ( 16777216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
730.31K /
56 Page |
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it Online |
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ITW PANCON
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| Part No. |
MTAS156-8
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| OCR Text |
3.96 mm) headers available in 2-24 circuits series mf/ml/mt .156" headers right angled flat mfas... 2C24 circuits right angled, locking mlas...3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 dimensions no. of circuits 2, 3, 4, 5, 6... |
| Description |
8 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER
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| File Size |
237.64K /
1 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
CR6CM-8 CR6CM-12
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| OCR Text |
... 10.5 max 4.5 2.5 2.5 0.8 1.0 f 3.6?.2 1.3 0.5 2.6 12.5 min 3.8 max 16 max 7.0 3.2?.2 4.5 23 1 4 * * measurement point of case temperature outline drawing dimensions in mm to-220 24 1 3 1
2
3
4 cathode anode gate anode
feb.1999 mits... |
| Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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| File Size |
75.21K /
5 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH32S64APFB-8 MH32S64APFB-7
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| OCR Text |
...dual in-line package)
single 3.3V0.3V power supply Clock frequency 100MHz(max.) Fully synchronous operation referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- ... |
| Description |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM
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| File Size |
696.32K /
55 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH32S64APHB-8 MH32S64APHB-6 MH32S64APHB-7
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| OCR Text |
...
(Component SDRAM)
5.4ns(CL=3) 6.0ns(CL=2) 6.0ns(CL=3)
124pin 125pin 40pin 41pin
Utilizes industry standard 16M x 8 Sy nchronous DRAMs TSOP and industry standard EEPROM in TSSOP 168-pin (84-pin dual in-line package)
single 3.3V0.... |
| Description |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM
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| File Size |
695.58K /
55 Page |
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it Online |
Download Datasheet |
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Price and Availability
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