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Samsung Semiconductor Co., Ltd.
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| Part No. |
KM23V8100DET KM23V8100DT
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| OCR Text |
...76 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on bhe voltage level.(see mode selection table) this device operates with ...0mhz) note : capacitance is periodically sampled and not 100% tested. item symbol test conditions m... |
| Description |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜ROM) 800万位Mx8 / 512Kx16）的CMOS掩模ROM00万位Mx8 / 512Kx16）的CMOS掩膜光盘
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| File Size |
56.66K /
4 Page |
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Samsung Electronics
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| Part No. |
K3N4C1000D-TC K3N4C1000D-TE
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| OCR Text |
288 x 16(word mode) * Fast access time : 100ns(Max.) * Supply voltage : single +5V * Current consumption Operating : 50mA(Max.) Standby : 50...0MHz)
Item Output Capacitance Input Capacitance Symbol COUT CIN Test Conditions VOUT=0V VIN=0V Min ... |
| Description |
8M-Bit CMOS Mask ROM
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| File Size |
59.14K /
3 Page |
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it Online |
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http://
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| Part No. |
SFT8600S.5
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| OCR Text |
...a doc .145 .115 .304 .288 .408 .392 .304 .288 3x .020 .010 .030 min .128 .112 .233 .217 2x .010 max ...0mhz) cob ?? 15 pf delay tim e rise time storage time fall time (vcc = 125vd... |
| Description |
NPN Transistor
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| File Size |
27.20K /
2 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM23C16205DSG
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| OCR Text |
...6 x 16 bit(word mode) or is 524,288 x 32 bit(double word mode) depending on word volt- age level.(see mode selection table) this device incl...0mhz) note : capacitance is periodically sampled and not 100% tested. item symbol test conditions m... |
| Description |
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM(16M(1Mx16 /512Kx32) CMOS掩膜ROM)
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| File Size |
69.43K /
5 Page |
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it Online |
Download Datasheet |
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AEROFLEX[Aeroflex Circuit Technology]
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| Part No. |
UT7Q512
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| OCR Text |
...MOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (E), an active LOW Outpu...0MHz Inputs: V IL = VSS IOUT = 0mA E = VDD - 0.5 VDD = VDD (max) VIH = VDD - 0.5V
Notes: * Post-rad... |
| Description |
512K x 8 SRAM
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| File Size |
105.61K /
16 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM23V4000DETY KM23V4000DTY
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| OCR Text |
... programmable rom organized 524,288 x 8 bit. it is fabricated using silicon gate cmos process technoiogy. this device operates with low po...0mhz) note : capacitance is periodically sampled and not 100% tested. item symbol test conditions m... |
| Description |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
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| File Size |
54.35K /
4 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM23C4000DTY KM23C4000DETY
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| OCR Text |
... programmable rom organized 524,288 x 8bit. it is fabricated using silicon gate cmos process technology. this device operates with a 5v si...0mhz) note : capacitance is periodically sampled and not 100% tested. item symbol test conditions m... |
| Description |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
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| File Size |
53.34K /
4 Page |
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it Online |
Download Datasheet |
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