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IBM Microeletronics
International Business Machines, Corp.
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| Part No. |
IBM0418A8ACLAB IBM0436A4ACLAB
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| OCR Text |
256kx36 & 512kx18) and 4Mb (128Kx36 & 256Kx18) SRAM
* 256K x 36 or 512K x 18 organizations * 128K x 36 or 256K x 18 organizations * 0.25 Micron CMOS technology * Synchronous Register-Latch Mode of Operation with Self-Timed Late Write * S... |
| Description |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
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| File Size |
29.76K /
6 Page |
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Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
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| Part No. |
IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS61LPD25636T/D IS61SPD25636T/D IS61SPD51218T/D IS61SPD25636T-166TQ
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| OCR Text |
...32/36) CE CLR Q1 A1
256Kx32; 256kx36; 512kx18 MEMORY ARRAY
16/17 18/19 Q
18/19 D
ADDRESS REGISTER
CE CLK 32, 36, or 18 32, 36, or 18
GW BWE BWd (x32/x36)
DQd BYTE WRITE REGISTERS
CLK
D
Q
BWc (x32/x36)
D DQc Q B... |
| Description |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道，双循环取消选择静态RAM
256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
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| File Size |
156.19K /
22 Page |
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Cypress
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| Part No. |
CY7C1303BV25-100BZXC CY7C1306BV25-100BZXC
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| OCR Text |
...ster
18
A(17:0)
K K
256kx36 Memory Array
256kx36 Memory Array
CLK Gen.
Control Logic
RPS C C
Read Data Reg. 72 Vref WPS BWS0 BWS1 BWS2 BWS3 Control Logic 36 Reg. 36 Reg. 36
Reg. 36
36 Q[35:0]
Selection Gu... |
| Description |
18-Mbit Burst of 2 Pipelined SRAM with QD(TM) Architecture
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| File Size |
246.26K /
19 Page |
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天津新技术产业园区管理委员会
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| Part No. |
IS61LPS25636A-200B2I-TR IS61LPS25636A-200B3I-TR
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| OCR Text |
...32/x36: a-d ce ce2 ce2 256kx32; 256kx36; 512kx18 memory array 32, 36, or 18 input registers clk output registers clk oe 2/4/8 oe dqa - dqd 32, 36, or 18 32, 36, or 18 a power down zz
integrated silicon solution, inc. 3 rev. k 01/19/10 ... |
| Description |
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| File Size |
579.96K /
35 Page |
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天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS61NLF25636A-7.5B2I-TR IS61NLF51218A-7.5B3I-TR IS61NVF51218A-6.5TQ IS61NVF51218A-6.5B3
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| OCR Text |
...r a,b) ce ce2 ce2 control logic 256kx36; 512kx18 memory array write address register write address register control logic buffer address register x 36: a [0:17] or x 18: a [0:18] clk cke a2-a17 or a2-a18 a0-a1 a'0-a'1 burst address counter ... |
| Description |
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PQFP100
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| File Size |
390.62K /
37 Page |
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Integrated Silicon Solution
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| Part No. |
IS61VF51218A IS61LF25636A
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| OCR Text |
...d) x18: a,b x36: a-d ce ce2 ce2 256kx36; 512kx18 memory array 36, or 18 input registers clk oe 2/4/8 oe dqa - dqd 36, or 18 36, or 18 a
integrated silicon solution, inc. ? 1-800-379-4774 3 rev. a 05/04/05 issi ? is61lf25636a is61l... |
| Description |
256K x 36-512K x 18 9Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
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| File Size |
256.65K /
32 Page |
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Samsung Electronic
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| Part No. |
K7M801825M
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| OCR Text |
256kx36 & 512kx18 flow-through n t ram tm - 1 - rev 4.0 november 1999 k7m801825m k7m803625m document title 256kx36 & 512kx18-bit flow through n t ram tm the attached data sheets are prepared and approved by samsung electronics. samsung ele... |
| Description |
256kx36 & 512kx18 Flow-Through NtRAMData Sheet
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| File Size |
383.53K /
17 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K7M803625A
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| OCR Text |
256kx36 & 512kx18 flow-through n t ram tm - 1 - rev 1.0 july 2000 k7m801825a k7m803625a document title 256kx36 & 512kx18-bit flow through n t ram tm the attached data sheets are prepared and approved by samsung electronics. samsung electro... |
| Description |
256kx36Bit Flow Through NtRAMData Sheet
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| File Size |
453.22K /
20 Page |
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it Online |
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