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Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HYM64V4045GU-50 Q67100-Q2187 HYM64V4005GU-50 HYM64V4005GU-60 HYM72V4005GU-50 HYM72V4005GU-60 Q67100-Q2184 Q67100-Q2185 Q67100-Q2186
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| OCR Text |
...1 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Symbol VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 CB0 CB1 VSS NC NC VCC WE0 CAS0 CAS1 RAS0 OE0 VSS A0 ... |
| Description |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
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| File Size |
94.87K /
17 Page |
 View
it Online |
Download Datasheet
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SAMSUNG
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| Part No. |
DSK6F1016U4C
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| OCR Text |
...
Typ 3.0 0 -
Max 3.3 0 Vcc+0.22) 0.6
Unit V V V V
CAPACITANCE1)(f=1MHz, TA=25C)
Item Input capacitance Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol CIN CIO
Test Condition VIN=0V VIO=0V
Min -... |
| Description |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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| File Size |
156.67K /
9 Page |
View
it Online |
Download Datasheet |
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
HYM72V8005GU-60 HYM72V8005GU-50 HYM64V8005GU-60 HYM64V8005GU-50 Q67100-Q2189 HYM64V8045GU-50 HYM64V8045GU-60 HYM72V8045GU-50 HYM72V8045GU-60 Q67100-Q2188
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| OCR Text |
...1 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Symbol VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 CB0 CB1 VSS NC NC VCC WE0 CAS0 CAS1 RAS0 OE0 VSS A0 ... |
| Description |
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module 8M X 64 EDO DRAM MODULE, 60 ns, DMA168
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| File Size |
89.86K /
17 Page |
View
it Online |
Download Datasheet |
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samsung
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| Part No. |
K6F1016U4C
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| OCR Text |
...
Typ 3.0 0 -
Max 3.3 0 Vcc+0.22) 0.6
Unit V V V V
CAPACITANCE1)(f=1MHz, TA=25C)
Item Input capacitance Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol CIN CIO
Test Condition VIN=0V VIO=0V
Min -... |
| Description |
IC,SRAM,64KX16,CMOS,BGA,48PIN,PLASTIC
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| File Size |
94.22K /
9 Page |
View
it Online |
Download Datasheet |
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GE Security, Inc.
GE[General Semiconductor]
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| Part No. |
MBR2560CT MBR2550CT MBR2545CT MBR2535CT
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| OCR Text |
...5 (3.68) 0.135 (3.43) 0.560 (14.22) 0.530 (13.46) 0.410 (10.41) 0.390 (9.91) PIN 2 0.635 (16.13) 0.625 (15.87) 1 160 (4.06) 140 (3.56) 0.560 (14.22) 0.530 (13.46) 3 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2... |
| Description |
RES,274 OHM,1/16W,1%,0603
SCHOTTKY RECTIFIER
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| File Size |
71.13K /
2 Page |
View
it Online |
Download Datasheet |
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GE[General Semiconductor]
GE Security, Inc.
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| Part No. |
P600G P600B P600M P600D P600K P600A P600J
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| OCR Text |
...CAL DATA
0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN.
Case: Void-free molded plastic body Terminals: Plated axial leads, solderable pe...35mm)
60 HZ RESISTIVE OR INDUCTIVE LOAD BOTH LEADS ATTACHED to HEAT SINKS WITH LENGTH as SHOWN, L... |
| Description |
General Purpose Plastic Rectifier(通用塑胶整流 通用塑料整流器公司（通用塑胶整流器）
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| File Size |
55.05K /
2 Page |
View
it Online |
Download Datasheet |
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