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Sanyo Semicon Device
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| Part No. |
2SK4124
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| OCR Text |
...mJ A
*1 VDD=99V, L=500H, IAV=20a *2 L500H, single pulse Marking : K4124
Any and all SANYO Semiconductor Co.,Ltd. products described or...200v, VGS=10V, ID=20a VDS=200v, VGS=10V, ID=20a VDS=200v, VGS=10V, ID=20a IS=20a, VGS=0V Ratings min... |
| Description |
N-Channel Silicon MOSFET General-Purpose Switching Device
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| File Size |
47.36K /
5 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FGP90N30TU FGP90N30
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| OCR Text |
...ltage : VCE(sat) = 1.1 V @ IC = 20a High input impedance Fast switching
General Description
Employing Unified IGBT Technology, Fairchild...200v
5
Collector Current, Ic [A]
0.1
0 0 10 20 30 40 50 60 70 80 90
0.01 0.1
Singl... |
| Description |
300V, 90A PDP IGBT
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| File Size |
660.49K /
7 Page |
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Fairchild Semiconductor
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| Part No. |
FGFP45N45TTU
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| OCR Text |
...ltage IC = 250A, VCE = VGE IC = 20a, VGE = 15V IC = 45A, VGE = 15V IC = 45A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres In...200v, IC = 45A, VGE = 15V VCC = 200v, IC = 45A, RG = 10, VGE = 15V, Resistive Load, TC = 125oC VCC =... |
| Description |
450V, 45A PDP Trench IGBT
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| File Size |
563.04K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FGPF30N30
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| OCR Text |
... voltage: VCE(sat) =1.4V @ IC = 20a * High Input Impedance * Fast switching * RoHS Complaint
General Description
Employing Unified IGBT ...200v Vcc = 100V
10
DC Operation
1ms
9
1
Single Nonrepetitive o Pulse Tc=25 C Curves mu... |
| Description |
300V, 30A PDP IGBT
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| File Size |
685.18K /
7 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
FK20SM-10
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| OCR Text |
.................................. 20a integrated fast recovery diode (max.) ........150ns 500 30 20 60 20 60 275 C55 ~ +150 C55 ~ +150 4.8 v...200v, i d = 10a, v gs = 10v, r gen = r gs = 50 w i s = 10a, v gs = 0v channel to case i s = 2... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
62.72K /
5 Page |
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it Online |
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Price and Availability
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