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  20 25 30a Datasheet PDF File

For 20 25 30a Found Datasheets File :: 7540    Search Time::1.453ms    
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    K6T0808C1D-RL55 K6T0808C1D-TP70 K6T0808C1D-TL55 K6T0808C1D-TL70 K6T0808C1D-DL55 K6T0808C1D-DL70 K6T0808C1D-GB55 K6T0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6T0808C1D-RL55 K6T0808C1D-TP70 K6T0808C1D-TL55 K6T0808C1D-TL70 K6T0808C1D-DL55 K6T0808C1D-DL70 K6T0808C1D-GB55 K6T0808C1D-GF70 K6T0808C1D-F K6T0808C1D-GB70 K6T0808C1D-GL55 K6T0808C1D-GL70 K6T0808C1D-GP70 K6T0808C1D-L K6T0808C1D-P K6T0808C1D-RB55 K6T0808C1D-RB70 K6T0808C1D-RF70 K6T0808C1D-RL70 K6T0808C1D-RP70 K6T0808C1D-TB55 K6T0808C1D-TB70 K6T0808C1D-TF70 K6T0808C1D-B K6T0808C1D-DB55 K6T0808C1D-DB70
OCR Text ...1 = 100 50A KM62256DL-L ISB1 = 20 10A KM62256DLI-L ISB1 = 50 15A - CIN = 6 8pF, CIO = 8 10pF - KM62256D-4/5/7 Family tOH = 5 10ns - KM...25 24 FUNCTIONAL BLOCK DIAGRAM A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A13 A...
Description 32K X 8 STANDARD SRAM, 70 ns, PDSO28
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
D2 - GLENAIR 32Kx8位低功耗CMOS静态RAM

File Size 169.00K  /  9 Page

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    30CPU04 30CPU04PBF

IRF[International Rectifier]
http://
Part No. 30CPU04 30CPU04PBF
OCR Text ...urrent (Rated VR , Square wave, 20 KHz), TC = 149C Operating Junction and Storage Temperatures - 65 to 175 C Per Leg Total Device Per Leg Pe...25 0.93 1.12 0.3 30 28 12 10 500 - IR Reverse Leakage Current - CT LS Junction Capaci...
Description 400V 30a Ultra-Fast Common Cathode Diode in a TO-247AC package
Ultrafast Rectifier

File Size 141.92K  /  7 Page

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    FSBB30CH600503

Fairchild Semiconductor
Part No. FSBB30CH600503
OCR Text ...IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) (21) NU (22) NV 19.2 (23) NW (24) U Case Temperature (T ) C Detecting Point (25) V (26) W DBC Substrate (27) P Figure 2. FSBB30CH60 Rev. B 2 www.fairchildsemi.com ...
Description Smart Power Module

File Size 562.25K  /  16 Page

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    APTCV60TLM24T3G

Microsemi Corporation
Part No. APTCV60TLM24T3G
OCR Text ...ent - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * ...25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and ...
Description CoolMOS & Trench Field Stop IGBT

File Size 299.34K  /  13 Page

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    APT30DQ60BHBG

Microsemi Corporation
Part No. APT30DQ60BHBG
OCR Text ...rature for 10 Sec. 30 51 320 20 -55 to 175 300 C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions I...25 500 36 052-6321 Rev A pF 1-2009 A DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRR...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 115.04K  /  4 Page

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    APT50M75JLLU3

Microsemi Corporation
Part No. APT50M75JLLU3
OCR Text ...source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min ...25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.16...
Description ISOTOP Buck chopper MOSFET Power Module

File Size 505.21K  /  8 Page

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    SPD30N03S2L-07G SPD30N03S2L-0708

Infineon Technologies AG
Part No. SPD30N03S2L-07G SPD30N03S2L-0708
OCR Text ...GS Ptot T j , Tstg 120 250 13 6 20 136 -55... +175 55/175/56 kV/s V W C mJ Value Unit A Maximum Ratings, at Tj = 25 C, unless otherwise specified Pulsed drain current TC=25C Avalanche energy, single pulse ID=30 A , V DD=25V, RGS=...
Description OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

File Size 587.43K  /  9 Page

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    IHW30N60T

Infineon Technologies AG
Part No. IHW30N60T
OCR Text ...voltage ( t p < 5 ms) v ge 20 25 v short circuit withstand time 2) v ge = 15v, v cc 400v, t j 150 c t sc 5 s power dissipation t c = 25 c p tot 187 w operating junction temperature t j -40...+175 st...
Description Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode

File Size 357.63K  /  12 Page

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