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SamHop Microelectronics...
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| Part No. |
STK400
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| OCR Text |
1.25 -55 to 150 i d units parameter 40 1.3 5.2 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics n-channel ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
93.31K /
7 Page |
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SamHop Microelectronics...
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| Part No. |
STK600
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| OCR Text |
1.25 -55 to 150 i d units parameter 60 0.80 4.4 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics n-channel...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
95.68K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STK900
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| OCR Text |
1.25 -55 to 150 i d units parameter 100 1 3.16 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics n-channel ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
95.54K /
7 Page |
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it Online |
Download Datasheet |
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WINGS[Wing Shing Computer Components]
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| Part No. |
WS336-5.0
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| OCR Text |
1.0% initial tolerance available Easily trimmed for minimum temperature drift
Programmable Shunt Regulator
Description
The WS336-5.0 ...6ohm dynamic impedance. A third terminal on the WS336-5.0 allow the reference voltage and temperatur... |
| Description |
Programmable Shunt Regulator
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| File Size |
71.48K /
3 Page |
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SamHop Microelectronics...
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| Part No. |
STP656F
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| OCR Text |
...r www.samhop.com.tw dec,01,2010 1 details are subject to change without notice. s g d ver 1.0 product summary v dss i d r ds(on) (m ) max 60...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
118.97K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STM8820
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| OCR Text |
...a www.samhop.com.tw apr,16,2012 1 details are subject to change without notice. t c =25 c w p d c -55 to 150 t c =25 c thermal characteris...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v,i d =0.7a... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
101.48K /
7 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STD417S
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| OCR Text |
...r www.samhop.com.tw aug,23,2010 1 details are subject to change without notice. g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) g g s s...6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-21.5a,v gs =-10v fall time tur... |
| Description |
P-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
123.15K /
8 Page |
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SamHop Microelectronics...
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| Part No. |
STUD40N01
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| OCR Text |
...a www.samhop.com.tw jul,05,2012 1 details are subject to change without notice. t c =25 c g g s s d d g g s s s t u s e ri e s to - 2 5 2 a...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
103.61K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD419A
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| OCR Text |
...r www.samhop.com.tw apr,21,2010 1 details are subject to change without notice. g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) g g s s...6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-24a,v gs =-10v fall time turn-... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
121.15K /
8 Page |
View
it Online |
Download Datasheet |
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