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  16mh Datasheet PDF File

For 16mh Found Datasheets File :: 118    Search Time::0.875ms    
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    FMH23N50ES

Fuji Electric
Part No. FMH23N50ES
OCR Text ...5 avalanche capability i av l=1.16mh, t ch =25c 23 - - a diode forward on-voltage v sd i f =23a, v gs =0v, t ch =25c - 0.90 1.35 v reverse recovery time trr i f =23a, v gs =0v -di/dt=100a/ s, tch=25c - 0.5 - s reverse recovery charge qrr ...
Description N-CHANNEL SILICON POWER MOSFETFeatures

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    FMH23N50E

Fuji Electric
Part No. FMH23N50E
OCR Text ...5 avalanche capability i av l=1.16mh, t ch =25c 23 - - a diode forward on-voltage v sd i f =23a, v gs =0v, t ch =25c - 0.90 1.35 v reverse recovery time trr i f =23a, v gs =0v -di/dt=100a/ s, tch=25c - 0.5 - s reverse recovery charge qrr ...
Description N-CHANNEL SILICON POWER MOSFET

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    FMR23N50ES

Fuji Electric
Part No. FMR23N50ES
OCR Text ...5 avalanche capability i av l=1.16mh, t ch =25c 23 - - a diode forward on-voltage v sd i f =23a, v gs =0v, t ch =25c - 0.90 1.35 v reverse recovery time trr i f =23a, v gs =0v -di/dt=100a/ s, tch=25c - 0.5 - s reverse recovery charge qrr ...
Description N-CHANNEL SILICON POWER MOSFET

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    FMR23N50E

Fuji Electric
Part No. FMR23N50E
OCR Text ...5 avalanche capability i av l=1.16mh, t ch =25c 23 - - a diode forward on-voltage v sd i f =23a, v gs =0v, t ch =25c - 0.90 1.35 v reverse recovery time trr i f =23a, v gs =0v -di/dt=100a/ s, tch=25c - 0.5 - s reverse recovery charge qrr ...
Description N-CHANNEL SILICON POWER MOSFET

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    FMV23N50ES

Fuji Electric
Part No. FMV23N50ES
OCR Text ...5 avalanche capability i av l=1.16mh, t ch =25c 23 - - a diode forward on-voltage v sd i f =23a, v gs =0v, t ch =25c - 0.90 1.35 v reverse recovery time trr i f =23a, v gs =0v -di/dt=100a/ s, tch=25c - 0.5 - s reverse recovery charge qrr ...
Description N-CHANNEL SILICON POWER MOSFET

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    IRFBC40 IRFBC42 FBC40

Harris Semiconductor
International Rectifier
Harris Corporation
Harris, Corp.
Part No. IRFBC40 IRFBC42 FBC40
OCR Text ... = 50V, starting TJ = 25oC, L = 16mh, RG = 25, peak IAS = 6.8A. (Figures 15, 16). Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 10 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 8 ...
Description 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs 6.2A.4A00V的,1.2.6 Ohm的N通道功率MOSFET

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    K3934

Toshiba Semiconductor
Part No. K3934
OCR Text ...h = 25 c(initi al), l = 8.16mh, i ar = 15 a, r g = 25 w note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensitive device. please handle with caution. ...
Description Search --To 2SK3934

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    Mitsubishi Electric Corporation
Part No. M30222 M30222FG-XXXFP
OCR Text ... ............. 62.5ns (f(x in )=16mh z ) ? supply voltage ............................................ 2.7 to 5.5v ? low power consumption ............................. tbd ? interrupts ..................................................... ...
Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

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    2SK3934

TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3934
OCR Text ...90 V, Tch = 25C(initial), L = 8.16mh, IAR = 15 A, R G = 25 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 1 2004-12...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
From old datasheet system

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    TOSHIBA
Part No. 2SK3934
OCR Text ...90 V, Tch = 25C(initial), L = 8.16mh, IAR = 15 A, R G = 25 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 1 2004-12...
Description MOSFET 2SK/2SJ Series

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For 16mh Found Datasheets File :: 118    Search Time::0.875ms    
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