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SIEMENS AG Infineon Technologies AG
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| Part No. |
BUZ102S-4
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| OCR Text |
...s forward current IS A 0.9 60 0.15 6.4 25.6 V 1.6 ns 90 C 0.23 Values typ. max. Unit
TA = 25 C
Inverse diode direct current, pulsed
ISM
-
TA = 25 C
Inverse diode forward voltage
VSD trr Qrr
VGS = 0 V, IF = 12.8 A
Reverse ... |
| Description |
6.4 A, 55 V, 0.028 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 SIPMOS ? Power Transistor Quad-Channel SIPMOS Power Transistor
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| File Size |
91.45K /
8 Page |
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Infineon
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| Part No. |
BUZ103S-4
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| OCR Text |
...)max
45 A
ID
35 30 25 20 15 10 5 0 0
1
2
3
4
5
6
7
8
V VGS
10
Semiconductor Group
6
06/Nov/1997
Preliminary data
BUZ 103S-4
Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 5.... |
| Description |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor
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| File Size |
90.04K /
8 Page |
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it Online |
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Siemens Semiconductor Group SIEMENS AG Infineon Technologies AG
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| Part No. |
BUZ103SL-4
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| OCR Text |
...meter: ID = 4.8 A, VGS = 5 V
0.15
Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 50 A
4.6 V 4.0
0.13
RDS (on)0.12
0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -60
VGS(th)
3.6 3.2 2.8
... |
| Description |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
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| File Size |
106.69K /
8 Page |
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it Online |
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MITEQ INC
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| Part No. |
LPLM-001-FREQ-A-4-20P LPLM-001-FREQ-A-3-15P
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| OCR Text |
15 ghz fea tures ? superior phase noise ? ideal for digital radio links ? 100% burn in, 3 year warranty options ? internal crystal referenc...4 0 -1 3 0 -1 2 0 -1 1 0 -1 0 0 -9 0 -8 0 -7 0 -6 0 -5 0 -4 0 10 100 1000 10000 100000 1000000 10000... |
| Description |
CRO, 3200 MHz - 15000 MHz
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| File Size |
193.87K /
4 Page |
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it Online |
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Price and Availability
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