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IRF[International Rectifier]
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| Part No. |
GB25RF120K
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| OCR Text |
...ray Inductance Design
VCES = 1200v IC = 25a, TC=80C tsc > 10s, TJ=150C
ECONO2 PIM
VCE(on) typ. = 2.40V
Benefits
* Benchmark Efficiency for Motor Control * Rugged Transient Performance * Low EMI, Requires Less Snubbing * Direct Mo... |
| Description |
IGBT PIM MODULE
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| File Size |
777.55K /
13 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
GB15RF120K
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| OCR Text |
...ray Inductance Design
VCES = 1200v IC = 15A, TC=80C tsc > 10s, TJ=150C
ECONO2 PIM
VCE(on) typ. = 2.55V
Benefits
* Benchmark Effic...25a, VGE = 15V IC = 15A, VGE = 15V, TJ = 125C IC = 25a, VGE = 15V, TJ = 125C VCE = VGE, IC = 250A
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| Description |
IGBT PIM MODULE
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| File Size |
345.88K /
13 Page |
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it Online |
Download Datasheet
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Fuji Semiconductors, Inc.
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| Part No. |
7MBR25NE120
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| OCR Text |
1200v / 25a / PIM
IGBT Modules
Features
* High Speed Switching * Voltage Drive * Low Inductance Module Structure * Converter Diode Bridge Dynamic Brake Circuit
Applications
* Inverter for Motoe Drive * AC and DC Servo Drive Ampli... |
| Description |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25a I(C) From old datasheet system
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| File Size |
492.47K /
8 Page |
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it Online |
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Infineon
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| Part No. |
SIDC14D120H6
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| OCR Text |
...crete devices features: 1200v emcon technology 120 m chip soft, fast switching low reverse recovery charge small temp...25a 3.8 x 3.8 mm 2 sawn on foil c67047 - a2205 - a001 mechanical parameter: raster s... |
| Description |
Diodes - HV Chips - SIDC14D120H6, 1200v, 25a
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| File Size |
65.04K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120A20SG
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| OCR Text |
1200v RDSon = 200m typ @ Tj = 25C ID = 50A @ Tc = 25C
Q1 G1 OUT S1
Application * Motor control * Switched Mode Power Supplies * Uninte...25a VGS = VDS, ID = 6mA VGS = 30 V, VDS = 0V
200 3
Max 1.5 6 240 5 450
Unit mA m V nA
Dy... |
| Description |
Phase leg Series & parallel diodes MOSFET Power Module
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| File Size |
268.76K /
6 Page |
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it Online |
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120A20DG
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| OCR Text |
1200v RDSon = 200m typ @ Tj = 25C ID = 50A @ Tc = 25C
Application * Zero Current Switching resonant mode Features * Power MOS 7(R) MOSFETs ...25a VGS = VDS, ID = 6mA VGS = 30 V, VDS = 0V
200 3
Max 1.5 6 240 5 450
Unit mA m V nA
Dy... |
| Description |
Phase leg with Series diodes MOSFET Power Module 50 A, 1200 V, 0.24 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
267.42K /
6 Page |
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it Online |
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Price and Availability
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