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  1200v 10ma Datasheet PDF File

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. RURU50120 FN3741
Description 50A/ 1200v Ultrafast Diode
50A, 1200v Ultrafast Diode 50 A, 1200 V, SILICON, RECTIFIER DIODE
50A 1200v Ultrafast Diode
From old datasheet system

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGT1S11N12 HGTG11N120CN HGT1S11N120CNS HGTP11N120CN FN4577
Description From old datasheet system
43A 1200v NPT Series N-Channel IGBT
43A/ 1200v/ NPT Series N-Channel IGBT
43A, 1200v, NPT Series N-Channel IGBT(43A, 1200v NPT系列N沟道绝缘栅双极型晶体 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 80.84K  /  7 Page

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    2SC4634LS

Sanyo Semicon Device
Part No. 2SC4634LS
Description NPN Triple Diffused Planar Silicon Transistor 1500V / 10ma High-Voltage Amplifier, High-Voltage Switching Applications
1500V/10ma High-Voltage Amplifier,High-Voltage Switching Applications

File Size 28.64K  /  3 Page

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    2SC4636LS

Sanyo Semicon Device
Part No. 2SC4636LS
Description NPN Triple Diffused Planar Silicon Transistor 1800V / 10ma High-Voltage Amplifier, High-Voltage Switching Applications
1800V/10ma High-Voltage Amplifier,High-Voltage Switching Applications

File Size 30.51K  /  3 Page

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    INTERSIL[Intersil Corporation]
http://
Part No. HGTG30N120CN HGTG30N120D2
Description 30A/ 1200v N-Channel IGBT
30A, 1200v N-Channel IGBT
75A 1200v NPT Series N-Channel IGBT

File Size 40.16K  /  5 Page

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    E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E1007 E32 E31 E404-5V E449-5V E208 E451-5V E262 E341 E344 E346 E261 E264 E

Gilway Technical Lamp
International Light Technologies Inc.
International Light Technologies, Inc.
Part No. E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E1007 E32 E31 E404-5V E449-5V E208 E451-5V E262 E341 E344 E346 E261 E264 E260 E194 E195 E263
Description Yellow, mini LED. Lens translucent. Luminous intensity at 10ma: 2.0mcd(min), 3.5mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
Orange InGaAIP, T-1 3/4, ultra bright LED. Lens orange translucent. Luminous intensity at 20mA: 700mcd(min), 3000mcd(max). Forward voltage at 20mA: 1.8V(typ), 2.3V(max).
Super bright green, mini LED. Lens translucent. Luminous intensity at 10ma: 10.0mcd(min), 16.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Green T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10ma: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Red T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10ma: 12.5mcd(typ), 32.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
T-1 bright white LED / Lens clear
Miniature LEDs 微型发光二极
Orange, mini LED. Lens translucent. Luminous intensity at 10ma: 3.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.6V(max).
Yellow T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10ma: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
High efficiency red, mini LED. Lens translucent. Luminous intensity at 10ma: 4.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max)(max).
Ultra bright red, mini LED. Lens translucent. Luminous intensity at 10ma: 20.0mcd(min), 60.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max)(max).
Yellow InGaAIP, T-1 3/4, ultra bright LED. Lens yellow translucent. Luminous intensity at 20mA: 400mcd(min), 1600mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).

File Size 1,264.77K  /  17 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9R18120S3S ISL9R18120G2 ISL9R18120P2 ISL9R18120S3ST ISL9R18120P2NL
Description 18A, 1200v STEALTH DIODE, TO263/D2PAK PACKAGE
18A, 1200v Stealth⑩ Diode

File Size 104.04K  /  6 Page

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    SML-211DTT86K SML-211YTT86K

Rohm
Part No. SML-211DTT86K SML-211YTT86K
Description 0805 2.0 1.25 t=0.8mm Low Current Type(IF 10ma)
0805<2.0 1.25 t=0.8mm> Low Current Type(IF 10ma)

File Size 107.94K  /  3 Page

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    HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N12

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N12
Description 43A, 1200v, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200v/ NPT Series N-Channel IGBT
43A 1200v NPT Series N-Channel IGBT

File Size 135.28K  /  7 Page

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    K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-G

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
Part No. K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
Description DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10ma-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10ma-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10ma-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10ma-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10ma-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10ma-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10ma-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10ma-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10ma-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
   256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

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