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  1107 Datasheet PDF File

For 1107 Found Datasheets File :: 42215    Search Time::1.609ms    
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    TE Connectivity, Ltd.
Yageo, Corp.
Powerex, Inc.
Part No. ATT-528F-34-NNN-07 ATT-528F-28-NNN-07 ATT-528F-32-NNN-07 ATT-528M-07-NNN-07 ATT-0559-09-NNN-07 ATT-0559-08-NNN-07 ATT-0559-01-NNN-07 ATT-0559-04-NNN-07 ATT-0559-06-NNN-07 ATT-547F-35-NNN-07 ATT-528M-40-NNN-07 ATT-547M-05-NNN-07 ATT-547F-39-NNN-07
OCR Text ...+ 0.5 db + 0.75 db 11 - 20 db + 0.75 db + 1.0 db 21 - 40 db + 1.0 db + 1.5 db impeda...07 att-547f-xx-nnn-07 att-547m-xx-nnn-07 attenuation value = xx, select 01 - 40 db in 1 db...
Description 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR STAINLESS STEEL
0 MHz - 8000 MHz RF/MICROWAVE FIXED ATTENUATOR
0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR

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    SPP80N08S2-07 SPI80N08S2-07 SPB80N08S2-07

INFINEON[Infineon Technologies AG]
Part No. SPP80N08S2-07 SPI80N08S2-07 SPB80N08S2-07
OCR Text ... 100 C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 5 12 Forward character. of reverse diod...07 pF A 10 4 10 2 C iss C oss 10 3 IF 10 1 C C rss T j = 25 ...
Description Low Voltage MOSFETs - TO220/263; 80 A; 75V; NL; 7,4 mOhm
OptiMOS Power-Transistor

File Size 422.05K  /  8 Page

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    IPP80P04P4-07

Infineon Technologies AG
Part No. IPP80P04P4-07
OCR Text ...= 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 drain-source breakdown voltage i f = f(v sd ) v br(dss) = f( t ...07 ipi80p04p4-07, ipp80p04p4-07 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d...
Description OptiMOS-P2 Power-Transistor

File Size 215.11K  /  9 Page

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    M83513-07-A M83513-07-B M83513-07-C M83513-07-D M83513-07-E M83513-07-F M83513-07-G M83513-06-A M83513-06-B M83513-06-C

Glenair, Inc.
Part No. M83513-07-A M83513-07-B M83513-07-C M83513-07-D M83513-07-E M83513-07-F M83513-07-G M83513-06-A M83513-06-B M83513-06-C M83513-06-D M83513-06-E M83513-06-F M83513-06-G
OCR Text ...2 36.45 36.45 mm. 7.42 9.65 11.23 13.46 15.04 17.27 17.58 19.81 21.39 23.62 25.20 27.43 23.93 26.16 mm. 5.54 5.54 5.54 5.54 5.54 5.54 5.54 5.54 5.54 5.54 5.54 5.54 6.60 6.60 mm. 5.13 4.70 5.13 4.70 5.13 4.70 5.13 4.70 5.13 4.70 ...
Description Micro-D Connectors

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    SPP80N08S2L-07 SPB80N08S2L-07

INFINEON[Infineon Technologies AG]
Part No. SPP80N08S2L-07 SPB80N08S2L-07
OCR Text ... 100 C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 5 12 Forward character. of reverse diod...07 pF A 10 4 10 2 C iss C oss 10 3 IF 10 1 C C rss T j = 25 ...
Description Low Voltage MOSFETs - TO220/263; 80 A; 75V; LL; 7,1 mOhm
OptiMOS Power-Transistor

File Size 309.63K  /  8 Page

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    IPB100N08S2-07 IPI100N08S2-07 IPP100N08S2-07 SP0002-19041 SP0002-19044 SP0002-19005

INFINEON[Infineon Technologies AG]
Part No. IPB100N08S2-07 IPI100N08S2-07 IPP100N08S2-07 SP0002-19041 SP0002-19044 SP0002-19005
OCR Text ...40 180 T j [C] T j [C] 11 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 12 Typical forward diode characteristicis IF = f(...07 IPP100N08S2-07, IPI100N08S2-07 13 Typical avalanche energy E AS = f(T j) parameter: I D = 80A 9...
Description OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OPTIMOS⑶ POWER-TRANSISTOR
OptiMOS㈢ Power-Transistor
OptiMOS? Power-Transistor

File Size 155.83K  /  8 Page

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    IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP0002-19053

Infineon Technologies AG
Part No. IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP0002-19053
OCR Text ...40 180 T j [C] T j [C] 11 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 12 Typical forward diode characteristicis IF = f(...07 IPP100N08S2L-07 13 Typical avalanche energy E AS = f(T j) parameter: I D=80A 900 800 10 700 600...
Description 100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor

File Size 151.43K  /  8 Page

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    Infineon
Part No. SPP80N06S2-07 SPB80N06S2-07
OCR Text ...4 v gs(th) 180 a 900 a 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 1...07 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%) 2001-05-16 page 7 spp...
Description Low Voltage MOSFETs - TO220/263/262; 80A; 55V; NL; 6.6mOhm
N-Channel OptiMOS Power Transistor

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    SPB100N08S2L-07 SPP100N08S2L-07

INFINEON[Infineon Technologies AG]
Part No. SPB100N08S2L-07 SPP100N08S2L-07
OCR Text ... 100 C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 5 12 Forward character. of reverse diod...07 pF A 10 4 Coss 10 3 IF 10 1 Ciss 10 2 C Crss T j = 25 C t...
Description Low Voltage MOSFETs - TO220/263; 100 A; 75V; LL; 6.8 mOhm
OptiMOS Power-Transistor

File Size 309.84K  /  8 Page

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    SPD50N03S2-07 SPD50N03S2-07G SPD50N03S2-0708

Infineon Technologies AG
Part No. SPD50N03S2-07 SPD50N03S2-07G SPD50N03S2-0708
OCR Text ... 100 C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diod...07 A pF Ciss 10 2 C 10 3 Coss IF 10 1 T j = 25 C typ T j = 175 C typ ...
Description OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

File Size 592.42K  /  9 Page

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