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  100v 5a Datasheet PDF File

For 100v 5a Found Datasheets File :: 7024    Search Time::3.312ms    
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    IRHF593230 IRHF597230

International Rectifier
Part No. IRHF593230 IRHF597230
OCR Text ...V VGS = -12V, ID = -4.5a VDS = -100v VDD = -100v, ID = -4.5a, VGS =-12V, RG = 7.5 BVDSS Drain-to-Source Breakdown Voltage -200 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistan...
Description -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205aF package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205aF package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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    2SD1692

Inchange Semiconductor Company Limited
Part No. 2SD1692
OCR Text ...taining Voltage-- : VCEO(SUS) = 100v(min.) *DC Current Gain-- : hFE = 2000(Min.) @ IC= 1.5 A *Complement to Type 2SB1149 APPLICATIONS *De...5a; IB= 1.5mA 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5a; IB= 1.5mA 2...
Description Silicon NPN Darlington Power Transistor

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    AON7452

Alpha & Omega Semiconductors
Part No. AON7452
OCR Text 100v n-channel mosfet sdmos tm general description product summary v ds i d (at v gs =10v) 5.5a r ds(on) (at v gs =10v) < 310m w r ds(on) (at v gs =7v) < 370m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i a...
Description 100v N-Channel MOSFET

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    SGS Thomson Microelectronics
Part No. AN829
OCR Text ... f/450v 4 1 cp tbd 5 1 cz 150pf/100v 6 2 c12, c72 1 m f/100v 7 1 c13 22nf/100v 8 1 c18 2.2nf/100v 9 1 c19 220 m f/25v 10 1 c71 68nf/100v 11 ...5a. the corresponding 100hz ca- pacitor current is defined by: i capa =(p out /v out ) cos 4!ft so t...
Description SEMICONDUCTOR KIT FOR POWER FACTOR CORRECTOR

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    BDX91 BDX93 BDX95

Inchange Semiconductor Company Limited
Inchange Semiconductor ...
Part No. BDX91 BDX93 BDX95
OCR Text ...(min)- bdx91 80v(min)- bdx93 100v(min)- bdx95 complement to type bdx92/94/96 applications designed for use in general purpose po...5a; i b = 1a b 1.0 v v be(sat)-1 base-emitter saturation voltage i c = 3a; i b = 0.3a b ...
Description isc Silicon NPN Power Transistor

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    FDMC261007 FDMC2610

FAIRCHILD[Fairchild Semiconductor]
Part No. FDMC261007 FDMC2610
OCR Text ...pacitance Gate Resistance VDS = 100v, VGS = 0V, f = 1MHz f = 1MHz 720 41 12 0.7 960 55 20 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Cha...
Description N-Channel UltraFET Trench? MOSFET 200V, 9.5a, 200mΩ
N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5a, 200mヘ

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    FDMC2610

Fairchild Semiconductor
Part No. FDMC2610
OCR Text ...pacitance Gate Resistance VDS = 100v, VGS = 0V, f = 1MHz f = 1MHz 720 41 12 0.7 960 55 20 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Cha...
Description N-Channel UltraFET Trench MOSFET(200V, 9.5a, 200mohm)

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    FDS2672

Fairchild Semiconductor
Part No. FDS2672
OCR Text ...pacitance Gate Resistance VDS = 100v, VGS = 0V, f = 1MHz f = 1MHz 1905 100 30 0.7 2535 135 45 pF pF pF Switching Characteristics td(on)...5a, VDD = 100v, VGS = 10V FDS2672 Rev. B 2 www.fairchildsemi.com FDS2672 N-Channel Ultra...
Description N-Channel UltraFET Trench㈢ MOSFET 200V, 3.9A, 70mз

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    SEMELAB LTD
Part No. BDS11CECC BDS12CECC BDS10SMD-JQR-BR4
OCR Text ... j junction temperature 60v 80v 100v 60v 80v 100v 5v 15a 5a 90w ?65 to 200c 200c mechanical data dimensions in mm(inches) 16.5 (0.65) 1.5(0.53) 10.6 (0.42) 12.70 (0.50 min) 2.54 (0.1) bsc 3.70 dia. nom 1 2 3 0.8 (0.03) 2.70 (0.106) 1.0 (0....
Description DIODE TVS 7.0V 600W UNI-DIR SM
DIODE TVS 75V 600W UNIDIR 5% SMB
15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB

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