| |
|
 |
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
| Part No. |
K7Q163682A K7Q161882 K7Q161882A
|
| OCR Text |
...evision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Icc, Isb addition 2. 1.8V Vddq addition 3. Speed bin change 1. Changed Pin...5P,7P,8P,3R-5R,7R-9R 10P,11N,11M,10K,11J,11G,10E,11D,11C,3B,3C,2D, 3F,2G,3J,3L,3M,2N 11P,10M,11L,11K... |
| Description |
512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36 512Kx36 & 1Mx18 QDR b2 SRAM
|
| File Size |
501.65K /
17 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
D45C11 NZT45C11
|
| OCR Text |
...device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
... |
| Description |
TRANSISTOR|BJT|PNP|80VV(BR)CEO|4AI(C)|TO-220AB
PNP Current Driver Transistor
|
| File Size |
53.18K /
3 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Agilent Technologies
|
| Part No. |
ATF-35143-BLK DEMO-ATF3X14-32
|
| OCR Text |
...d Gain * 11 dBm Output Power at 1 dB Gain Compression * 21 dBm Output 3rd Order Intercept
SOURCE
5Px
Gate Width 1600 800 400
1.9 ...5P" = Device code "x" = Date code character. A new character is assigned for each month, year.
Ap... |
| Description |
Single stage 2 GHz LNA demonstration board for ATF-3x143 series ultra low noise PHEMTs TRANSISTOR,HEMT,N-CHAN,5.5V V(BR)DSS,40MA I(DSS),SOT-343R
|
| File Size |
465.41K /
19 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|