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				ADPOW[Advanced Power Technology]
Part No.	APT5020BVFR
OCR Text	0.200 POWER MOS V (R) FREDFET TO-247 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ...780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 2.21 (.087) 2.59 (.102) 050-5527 ...
Description	POWER MOS V 500V 26A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.42K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BVR
OCR Text	0.200 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 2.21 (.087) 2.59 (.102) 050-5512 ...
Description	POWER MOS V 500V 26A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.88K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text	0.240W POWER MOS 7TM FREDFET BFLL D3PAK TO-247 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhanceme...780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Rev - G...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5024BVFR
OCR Text	0.240 POWER MOS V (R) FREDFET TO-247 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ...780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 2.21 (.087) 2.59 (.102) 050-5556 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 22A 0.240 Ohm
File Size	61.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BVR
OCR Text	0.240 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 2.21 (.087) 2.59 (.102) 050-5525 ...
Description	POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.21K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5025BN APT5030BN
OCR Text	0.25 21.0A 0.30 POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V N...780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 050-5007 Rev C 2.21 (.087) 2.59...
Description	POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5028BVR
OCR Text	0.280 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 2.21 (.087) 2.59 (.102) 050-5615 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 20A 0.280 Ohm
File Size	61.82K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50GF120B2R APT50GF120LR
OCR Text	... Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Chara...780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (....
Description	The Fast IGBT is a new generation of high voltage power IGBTs. 该快速IGBT是一种高压IGBT的新一代 Fast IGBT 1200V 80A
File Size	37.28K / 3 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF60BR
OCR Text	... Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 2 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Character...780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Collector (Cathode) Emitter (Anode) 2.21 (.087)...
Description	Fast IGBT 600V 75A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	80.83K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50L2FLL
OCR Text	0.050W POWER MOS 7TM FREDFET TO-264 Max Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po...780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-7115 Rev- 9-2001 Gate Drain Source 0.48 (....
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	52.74K / 2 Page	View it Online	Download Datasheet

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