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  0.17-0.25v Datasheet PDF File

For 0.17-0.25v Found Datasheets File :: 18807    Search Time::1.5ms    
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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... VDSS =100V G S RDS(on) = 0.11 ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced process...17 12 60 3.8 79 0.53 20 150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ... VDSS = 500V G S RDS(on) = 0.85 ID = 8.0A Description This new series of low charge HEXFET(R) power MOSFETs achieve significant low...17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text 0.675) 16.64 (0.655) P-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES * HERMETICALLY SEALED TO-3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0...
Description P-CHANNEL POWER MOSFET

File Size 21.26K  /  2 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de...17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature MIN -100 -2 -...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ...ber IRF9230 BVDSS -200V RDS(on) 0.80 ID -6.5A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET...17 50 100 100 80 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = -1.0mA Reference to 25C, I ...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 148.64K  /  7 Page

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    IRF9240 IRF9240-SMD

TT electronics Semelab Limited
International Rectifier
SEME-LAB[Seme LAB]
Part No. IRF9240 IRF9240-SMD
OCR Text 0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) P-CHANNEL POWER MOSFET D 38.61 (1.52) 3...17.15 (0.675) 1 2 G S 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO...
Description CAP CER 250VAC 150PF X7R 1808
P-CHANNEL POWER MOSFET

File Size 25.33K  /  2 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ... 3 6 4 5 RDS(on) = 0.030 T o p V ie w Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603 ...17 550 260 100 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ... D VDSS = -100V RDS(on) = 0.117 G ID = -23A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...17 5C T J = 2 5C 10 0s 10 1m s 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 V G S = 0V 1.4 A 1 1...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ... D VDSS = -100V RDS(on) = 0.117 G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processi...17 5C T J = 2 5C 10 0s 10 1m s 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 V G S = 0V 1.4 A 1 1...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe...17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID =...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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For 0.17-0.25v Found Datasheets File :: 18807    Search Time::1.5ms    
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