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  0.0133 Datasheet PDF File

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    IRF[International Rectifier]
Part No. IRFIZ48N IRFIZ48 IRFIZ48NPBF
OCR Text ... U G VDSS = 55V RDS(on) = 0.016 ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)

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    IRF[International Rectifier]
Part No. IRFIZ34VPBF
OCR Text ...r M3 srew Max. 20 14 120 30 0.20 20 81 30 3.0 4.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. --- ---...
Description Advanced Process Technology

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    IRF[International Rectifier]
Part No. IRFIB7N50L
OCR Text ...t, VGS @ 10V Max. 6.8 4.3 27 46 0.37 30 24 -55 to + 150 300 (1.6mm from case ) 10lbxin (1.1Nxm) W W/C V V/ns C Units A ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25C Power Dissipation VGS dv/dt TJ TSTG ...
Description 500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package

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    IRF[International Rectifier]
Part No. IRFIB7N50APBF
OCR Text ...w VDSS 500V Rds(on) max 0.52 ID 6.6A TO-220 FULLP AK GDS Max. 6.6 4.2 44 60 0.48 30 6.9 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Applicable Off Line SMPS Topologies: Two Tra...
Description SMPS MOSFET

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    IRF[International Rectifier]
Part No. IRFIB5N50L
OCR Text ...IB5N50L HEXFET(R) Power MOSFET 0.67 73ns 4.7A VDSS RDS(on) typ. Trr typ. ID 500V Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive ...
Description MOTOR Control Application

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    IRF[International Rectifier]
Part No. IRFIB5N50LPBF
OCR Text ...lecom and Server Power Supplies 0.67 500V 73ns 4.7A * Uninterruptible Power Supplies * Motor Control applications * Lead-Free Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower ...
Description SMPS MOSFET

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    IRF[International Rectifier]
Part No. IRFI1310G
OCR Text ...ixing. VDSS = 100V RDS(on) = 0.04 ID = 22A Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Collector Current, VGS @ 10V Pu...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)

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    Hirose Electric USA, INC.
HIROSE[Hirose Electric]
Part No. ID2M-8S-2.54DS
OCR Text ...0 to 55 Hz, single amplitude of 0.75 mm , 2 hours in each of the 3 directions. 96 hours at temperature of 40c and humidity of 90% to 95% (-55c: 30 minutes/ 5 to 35c:10 minutes/85c:30 minutes / 5 to 35c:10 minutes)for 5 cycles 100000 cycles ...
Description Smart Card Sockets

File Size 76.24K  /  4 Page

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    INTERSIL[Intersil Corporation]
Part No. ID82C86H 82C86H 82C86H_04 82C86H04
OCR Text ...0 = 480mA - 12 ) x ( 5.0V x 0.8 ) ( 20 x 10 -9 ) (EQ. 3) OE T VCC P VCC Gated Inputs During normal system operation of a latch, signals on the bus at the device inputs will become high impedance or make transitions unre...
Description    CMOS Octal Bus Transceiver

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    GE[General Semiconductor]
Part No. IDB31
OCR Text 0) .016 (0.4) 3 .056 (1.43) .052 (1.33) FEATURES Intend for use in triac and thyristors circuits VBO: 30V to 34V Excellent Breakover Voltage Symmetry: typ. 1% Low Breakover Current: 20A typ. Marking: B31 Bidirectional Operation: P...
Description PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE

File Size 143.40K  /  3 Page

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