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| Part No. |
FAR-F5CE-906M00-K215 FAR-F5CE-881M50-K235 FAR-F5CE-947M50-K233
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| OCR Text |
...circuits are not required. (50 w i/o) ? surface mount package (smt) ? standard devices are available for mobile communication standards....cdma tx 836.5 25 25 far-f5ce-836m50-k225 low loss type 836.5 25 36 far-f5ce-836m50-k236 low loss typ... |
| Description |
1 FUNCTIONS, 906 MHz, SAW FILTER
1 FUNCTIONS, 881.5 MHz, SAW FILTER
1 FUNCTIONS, 947.5 MHz, SAW FILTER
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| File Size |
264.30K /
39 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MHPA19010N
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| OCR Text |
...ta mhpa19010n 1930- 1990 mhz 10 w, 24.5 db rf high power ldmos amplifier case 301ap - 02, style 3 ? freescale semiconductor, inc., 2006. al...cdma power gain and efficiency versus frequency g ps , power gain (db) , drain efficiency (%) 2?c... |
| Description |
PCS Band RF Linear LDMOS Amplifier PCS频段的射频线性LDMOS的放大器
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| File Size |
128.57K /
8 Page |
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it Online |
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JRC
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| Part No. |
NJG1634LK5
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| OCR Text |
...gs (t a = + 25c, z s =z l =50 w ) parameter symbol conditions duty cycle ratings units antenna port 100khz~12.75ghz c...cdma 824mhz~894mhz cw 34.0 dbm pcs cdma 1850 mhz~1990mhz cw 34.0 dbm rf input po... |
| Description |
SP6T ANTENNA SWITCH GaAs MMIC / LCSP16-K5
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| File Size |
673.14K /
22 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S19060NBR1 MRF6S19060NR1
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| OCR Text |
...c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier n - cdma performance: v dd = 28 volts, i dq = 610 ma, p out = 12 watts avg., full frequency band, is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13)... |
| Description |
RF Power Field Effect Transistors 射频功率场效应晶体管
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| File Size |
613.40K /
16 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S18140HR3
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| OCR Text |
...c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier n - cdma performance: v dd = 28 volts, i dq = 1200 ma, p out = 29 watts avg., full frequency band, is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13)... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
407.60K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRFE6S9135HR3
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| OCR Text |
...ent. ? typical single- carrier w - cdma performance: v dd = 28 volts, i dq = 1000 ma, p out = 39 watts avg., full frequency band, 3gpp test model 1, 64 dpch with 50% clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ ... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFETs N沟道增强型MOSFET的外
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| File Size |
438.73K /
12 Page |
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it Online |
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