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  vgsoff-10v Datasheet PDF File

For vgsoff-10v Found Datasheets File :: 89    Search Time::0.75ms    
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    TIM5359-16UL

Toshiba Semiconductor
Part No. TIM5359-16UL
OCR Text ....5 10.5 1.5 -4.0 1.8 gm VGSoff IDSS VGSO Rth(c-c) Channel to Case u The information contained herein is presented only as a gu...10V IDS4.4A Pin=32.5dBm Pout(dBm) 43 42 41 40 5.3 5.4 5.5 5.6 5.7 5.8 5.9 F...
Description MICROWAVE POWER GaAs FET

File Size 365.80K  /  4 Page

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    TIM5359-80SL

Toshiba Semiconductor
Part No. TIM5359-80SL
OCR Text ...ge Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) (Max.) UNIT S V A V C/W MIN. -1.0 -5 TYP. 20 -1.8 38 0.5 MAX. -3.0 0.6 ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V V...
Description IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level

File Size 40.11K  /  2 Page

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    TIM5359-8UL

Toshiba Semiconductor
Part No. TIM5359-8UL
OCR Text ...S= 3V VGS= 0V IGS= -100A gm VGSoff IDSS VGSO Rth(c-c) Channel to Case The information contained herein is presented only as a guid...10V IDS2.2A Pin=29.5dBm Pout(dBm) 40 39 38 37 5.3 5.4 5.5 5.6 5.7 5.8 5.9 F...
Description HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz

File Size 96.16K  /  4 Page

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    TIM6472-35SL TIM6472-35SL06

Toshiba Semiconductor
Part No. TIM6472-35SL TIM6472-35SL06
OCR Text ...hermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420A Cha...10V IDS8.0A Pin=37.5dBm 46 45 44 43 Pout(dBm) 6.4 6.6 6.8 7.0 7.2 Frequency (G...
Description MICROWAVE POWER GaAs FET

File Size 505.82K  /  4 Page

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    TIM7785-12UL09

Toshiba Semiconductor
Part No. TIM7785-12UL09
OCR Text ...S= -140A Channel to Case gm VGSoff IDSS VGSO Rth(c-c) The information contained herein is presented only as a guide for the applicati...10V IDS 3.2A Pin= 33dBm Frequency (GHz) Output Power vs. Input Power 43 42 41 40 Po (dBm) 3...
Description HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz

File Size 117.17K  /  4 Page

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    TIM7785-25UL

Toshiba Semiconductor
Part No. TIM7785-25UL
OCR Text ...S= -280A Channel to Case gm VGSoff IDSS VGSO Rth(c-c) The information contained herein is presented only as a guide for the applicati...10V IDS 6.8A Pin= 36.0dBm Output Power vs. Input Power 46 45 44 43 Po (dBm) 42 41 40 39 38 37 ...
Description HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz

File Size 116.96K  /  4 Page

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    TIM7785-30SL TIM7785-30SL06

Toshiba Semiconductor
Part No. TIM7785-30SL TIM7785-30SL06
OCR Text ...hermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 10A VDS= 3V IDS= 100mA VDS= 3V VGS= 0V IGS= -350A Chann...10V Pout(dBm) 47 IDS7.0A Pin=39.0dBm 46 45 44 7.7 7.9 8.1 8.3 8.5 Fre...
Description MICROWAVE POWER GaAs FET

File Size 496.65K  /  4 Page

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    TIM7785-35SL TIM7785-35SL06

Toshiba Semiconductor
Part No. TIM7785-35SL TIM7785-35SL06
OCR Text ...hermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420A Cha...10V 47 IDS8.0A Pin=39.5dBm 46 45 44 7.7 7.9 8.1 8.3 8.5 Frequency(GHz...
Description MICROWAVE POWER GaAs FET

File Size 494.62K  /  4 Page

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    TIM7785-45SL

Toshiba Semiconductor
Part No. TIM7785-45SL
OCR Text ...ge Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 11.0A VDS= 3V IDS= 170mA VDS= 3V VGS= 0V IGS= -500A Channe...10V 48 IDS9.6A Pin=40.5dBm 47 46 45 7.7 7.9 8.1 8.3 8.5 Frequency(GHz...
Description MICROWAVE POWER GaAs FET

File Size 495.05K  /  4 Page

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    TIM7785-4UL09

Toshiba Semiconductor
Part No. TIM7785-4UL09
OCR Text ...-2.5 2.6 4.5 -4.0 6.0 gm VGSoff IDSS VGSO CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VGS= 0V IGS= -50A Rth(c-c) Cha...10V IDS 1.1A Pin= 28.0dBm Frequency (GHz) Output Power vs. Input Power 40 39 38 37 Po (dBm)...
Description HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz

File Size 117.01K  /  4 Page

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