| |
|
 |
TY Semiconductor Co., L... TY Semicondutor
|
| Part No. |
2SK3116
|
| Description |
Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) N-Channel MOSFET
|
| File Size |
65.76K /
1 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
ICE Components, Inc. ICE COMPONENTS INC
|
| Part No. |
LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1R0-RM LS1608-1R5-RM LS1608-3R3-RM LS1608-4R7-RM LS1608-2R2-RM LS1608-221-RM LS1608-6R8-RM LS1608-102-RM LS1608-471-RM LS1608-472-RM LS1608-330-RM LS1608-680-RM LS1608-150-RM LS1608-681-RM LS1608-151-RM
|
| Description |
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled 5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled
|
| File Size |
504.01K /
1 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
TY Semicondutor TY Semiconductor Co., Ltd
|
| Part No. |
2SK2111
|
| Description |
N-Channel MOSFET Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
|
| File Size |
94.84K /
1 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
TY Semiconductor Co., Ltd
|
| Part No. |
2SK3294
|
| Description |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)
|
| File Size |
76.05K /
1 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
TY Semiconductor Co., L...
|
| Part No. |
FDG6304P
|
| Description |
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
|
| File Size |
310.42K /
2 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
TY Semiconductor Co., L...
|
| Part No. |
FDG6301N
|
| Description |
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
|
| File Size |
214.66K /
2 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|