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  vgs-4 5v Datasheet PDF File

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    TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
Part No. FDB2570 KDB2570
Description 22 A, 150 V. RDS(ON) = 80 m VGS = 10 V Fast switching speed Low gate charge

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    TY Semiconductor Co., L...
TY Semicondutor
Part No. 2SK3116
Description Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
N-Channel MOSFET

File Size 65.76K  /  1 Page

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    ICE Components, Inc.
ICE COMPONENTS INC
Part No. LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1R0-RM LS1608-1R5-RM LS1608-3R3-RM LS1608-4R7-RM LS1608-2R2-RM LS1608-221-RM LS1608-6R8-RM LS1608-102-RM LS1608-471-RM LS1608-472-RM LS1608-330-RM LS1608-680-RM LS1608-150-RM LS1608-681-RM LS1608-151-RM
Description 5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled
Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled

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    TY Semicondutor
TY Semiconductor Co., Ltd
Part No. 2SK2111
Description N-Channel MOSFET
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed

File Size 94.84K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. KXU05N25
Description VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V

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    TY Semiconductor Co., Ltd
Part No. KXU03N25
Description VDS (V) = 250V RDS(ON) 2 (VGS = 10V) Drain-Source Voltage VDSS 250 V

File Size 276.48K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SK3294
Description Gate voltage rating -30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)

File Size 76.05K  /  1 Page

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    TY Semiconductor Co., L...
Part No. FDG6304P
Description Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).

File Size 310.42K  /  2 Page

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    TY Semiconductor Co., L...
Part No. FDG6301N
Description Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).

File Size 214.66K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. SI4410DY
Description RDS(ON) 0.0135 VGS=10V Low gate charge. Fast switching speed.

File Size 282.40K  /  2 Page

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