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  vceo-120v Datasheet PDF File

For vceo-120v Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    2N4030 2N4031 2N4032

Continental Device India Limited
Part No. 2N4030 2N4031 2N4032
Description 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE.
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE.
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE.

File Size 140.63K  /  4 Page

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    CTN368 CTN369

Continental Device India Limited
Part No. CTN368 CTN369
Description 1.000W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 50 - hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 0.500A Ic, 50 - hFE

File Size 150.66K  /  3 Page

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    2SB631 2SB631K 2SD600 2SD600K

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SB631 2SB631K 2SD600 2SD600K
Description NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体

File Size 114.39K  /  4 Page

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    ASI10730 VHB50-28S

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10730 VHB50-28S
Description NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR

File Size 16.22K  /  1 Page

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    ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314A

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314A
Description NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR

File Size 16.54K  /  1 Page

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    CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q

Continental Device India Limited
Part No. CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q
Description 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q

File Size 131.15K  /  3 Page

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    Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
Part No. CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y
Description 25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y

File Size 135.13K  /  3 Page

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    C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2688R CSC2688Y

Continental Device India Limited
Part No. C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2688R CSC2688Y
Description 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.

File Size 136.14K  /  2 Page

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    TY Semiconductor Co., L...
Part No. 2SC3295
Description High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V.

File Size 54.50K  /  1 Page

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    CDIL[Continental Device India Limited]
Part No. CD9012 CD9012J CD9012D CD9012E CD9012F CD9012G CD9012H CD9012I CD9012DEF CD9012GHI
Description 0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 278 - 465 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 118 - 305 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 135 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 465 hFE
PNP SILICON PLANAR TRANSISTOR

File Size 85.79K  /  3 Page

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