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New Jersey Semi-Conductor P...
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| Part No. |
BFX37
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| OCR Text |
... 'ebo vces vceo vebo *vce (sat) vbe (on) *vbe (sat) *hfe test condition vce=70v, vbe=0 vce=70v, vbe=0, ta=150c veb=4v, lc=0 lc=10ua, vbe=0 lc=1ma, ib=0 !e=10ua, lc=0 lc=10ma, lb=0.5ma lc=50ma, lb=5ma lc=1ma,vce=5v lc=10ma, lb=0.5ma lc=50ma,... |
| Description |
PNP SILICON PLANAR TRANSISTOR
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| File Size |
81.92K /
2 Page |
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Continental Device India Li...
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| Part No. |
BFX34
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| OCR Text |
...base emitter saturation voltage vbe(sat) ic=5a, ib=0.5a - - 1.8 v dc current gain hfe ic=1a, vce=2v - 30 - ic=1.5a, vce=0.6v - 60 - ic=2a, vce=2v 40 - 150 collector capacitance cc vcb=10v, ie=ie=0 - 36 - pf f=1mhz emitter capacitance ce veb... |
| Description |
NPN SILICON EPITAXIAL TRANSISTOR
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| File Size |
86.17K /
2 Page |
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it Online |
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New Jersey Semi-Conductor P...
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| Part No. |
BDX18N
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| OCR Text |
...r voltaqt .^*=r, cd???0^m.rr.ur vbe = + 1 .s v 1 filter -bait voltag* l^"?wn 6mtttwr-bf** ??ktor current f-s^"' co/ltcmir -? current u^-t/uftas* j"* duumtion ?>?mr/o/, a, pu/b.om "oiiezs c ^ui*ge and junction temperature max '""otorurt 40 i... |
| Description |
PNP SILICON TRANSISTORS, EPITAXIAL BASE
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| File Size |
81.12K /
2 Page |
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it Online |
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New Jersey Semi-Conductor P...
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| Part No. |
BUW48
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| OCR Text |
...eter collector-emitter voltage (vbe = -1.5v) collector-emitter voltage (is = 0) emitter-base voltage (ic = 0) collector current collector peak current base current base peak current total power dissipation at tease < 25 c storage temperatur... |
| Description |
HIGH POWER NPN SILICON TRANSISTORS
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| File Size |
100.47K /
3 Page |
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it Online |
Download Datasheet
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