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AXQ6101 102CA 29400 F0700 2744348 8FE07 UCY7437N PUMA6
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  trench-based Datasheet PDF File

For trench-based Found Datasheets File :: 1918    Search Time::1.969ms    
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    AOL1712

Alpha & Omega Semiconductors
Part No. AOL1712
OCR Text ...rfet tm aol1712 uses advanced trench technology with a monolithically integrated schottkydiode to provide excellent r ds(on) ,and low gate...based on t j(max) =150c, using steady state junction-to-ambient thermal resistance. b. the power di...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 250.98K  /  6 Page

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    AOB298L

Alpha & Omega Semiconductors
Part No. AOB298L
OCR Text ...t298l & aob298l & aotf298l uses trench mosfet technology that is uniquely optimized to provide the most efficient high frequency switching p...based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given appl...
Description 100V N-Channel MOSFET

File Size 375.35K  /  7 Page

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    Alpha & Omega Semiconductor...
Part No. AO4805 AO4805-10
OCR Text ...ax the ao4805 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is i...based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating,...
Description 30V Dual P-Channel MOSFET

File Size 246.08K  /  5 Page

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    AOP604

OPTEK[OPTEK Technologies]
ETC
Optek Technology
Part No. AOP604
OCR Text trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable fo...based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction...
Description LJT 12C 8#20 4#16 SKT WALL REC
Complementary Enhancement Mode Field Effect Transistor

File Size 532.90K  /  11 Page

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    TY Semiconductor Co., Ltd
Part No. AOT10T60P
OCR Text ... 1/8" from case for 5 seconds ? trench power alphamos-ii technology ? low r ds(on) ? low ciss and crss ? high current capability ? rohs and ...based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting t...
Description Trench Power AlphaMOS-II technology

File Size 1,237.39K  /  7 Page

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    AON7788

Alpha & Omega Semiconductors
Part No. AON7788
OCR Text ...srfet tm aon7788 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent r ds(on) and low g...based on r ja t 10s value and the maximum allowed junction temperature of 150c. the value in...
Description 30V N-Channel MOSFET

File Size 274.52K  /  7 Page

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    AON7784

Alpha & Omega Semiconductors
Part No. AON7784
OCR Text ...srfet tm aon7784 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent r ds(on) and low ga...based on r q ja t 10s value and the maximum allowed junction tempera ture of 150c. the value ...
Description 30V N-Channel MOSFET

File Size 257.39K  /  7 Page

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    TY Semiconductor Co., Ltd
Part No. AOTF10T60P
OCR Text ... 1/8" from case for 5 seconds ? trench power alphamos-ii technology ? low r ds(on) ? low ciss and crss ? high current capability ? rohs and ...based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting t...
Description Trench Power AlphaMOS-II technology

File Size 966.74K  /  7 Page

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    AO4576

Alpha & Omega Semiconductors
Part No. AO4576
OCR Text ... 100% r g tested 30v ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current c...based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating...
Description 30V N-Channel AlphaMOS

File Size 327.34K  /  5 Page

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    TY Semicondutor
Part No. AO3421
OCR Text ... range the ao3421 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. this device is suitable for use as a ...based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating,...
Description Single P -Channel MOSFET

File Size 336.35K  /  5 Page

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For trench-based Found Datasheets File :: 1918    Search Time::1.969ms    
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