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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7240-100A
OCR Text	...Quick reference data Conditions tmb = 25 C; VGS = 10 V tmb = 25 C VGS = 10 V; ID = 25 A Tj = 175 C Typ - - - - 34 - Max 100 34 114 175 40 100 Unit V A W C drain-source voltage (DC) drain current (DC) total power dissipation junction tempera...
Description	TrenchMOS standard level FET TrenchMOS TM standard level FET TrenchMOS⑩ standard level FET
File Size	106.46K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUT11AI
OCR Text	....5 0.15 UNIT V V A A W V A s tmb 25 C IC = 2.5 A; IB = 0.33 A ICon = 2.5 A; IBon = 0.5 A PINNING - TO220AB PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING ...
Description	Silicon Diffused Power Transistor
File Size	17.61K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PHP191NQ06LT
OCR Text	...Ptot Quick reference Conditions tmb = 25 C; VGS = 10 V; see Figure 1 and 3 tmb = 25 C; see Figure 2 Min Typ Max 55 75 300 Unit V A W drain-source voltage Tj 25 C; Tj 175 C drain current total power dissipation gate-drain charge Symbol Par...
Description	N-channel TrenchMOS logic level FET
File Size	196.86K / 13 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BUT11 BUT11A
OCR Text	...d 9 see Figs 2 and 4 see Fig. 4 tmb 25 C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 5 10 100 0.8 V V V A A W s PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTER...
Description	Silicon Diffused Power Transistor(硅扩散功率型晶体 Silicon diffused power transistors
File Size	96.54K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUT211X
OCR Text	... 0 20 40 60 80 100 tmb / C 120 140 0.1 1 IC / A 10 Fig.7. Normalised power dissipation. PD% = 100PD/PD 25C = f (tmb) Zth / (K/W) BU1706AX Fig.10. Typical collector-emitter saturation voltage. VCEsat = f(IC...
Description	Silicon Diffused Power Transistor
File Size	53.84K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUT211 BU2527AF
OCR Text	...0 2.0 0.1 UNIT V V A A W V s tmb 25 C IC = 3.0 A; IB = 0.4 A ICon = 3.0 A; IBon = 0.3 A PINNING - TO220AB PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING V...
Description	Silicon Diffused Power Transistor 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
File Size	70.77K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BYV32-100 BYV32-150 BYV32-200 BYV32
OCR Text	...temperature square wave = 0.5; tmb 115 C sinusoidal a = 1.57; tmb 118 C t = 25 s; = 0.5; tmb 115 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 20 18 28 ...
Description	ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% Shaft; Style: 2 - light; Applicable Model: ME(S) Rectifier diodes ultrafast
File Size	30.35K / 6 Page	View it Online	Download Datasheet

				New Jersey Semi-Conductor P...
Part No.	BLT53
OCR Text	...eference data rf performance at tmb = 25 "c in a common emitter test circuit. mode of operation c.w. class-b f (mhz) 470 vce (v) 7.5 pl (w) 8 gp (db) > 6 ilc (%) > 60 pin 1 2 3 4 description collector emitter base emitter warning product an...
Description	UHF power transistor
File Size	119.36K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	CGY1041
OCR Text	... VB = 24 V (DC); ZS = ZL = 75 ; tmb = 35 C; unless otherwise specified. Symbol Gp Parameter power gain Conditions f = 45 MHz f = 870 MHz f = 1003 MHz CTB CCN Itot [1] [2] Min 19.0 20.4 21.0 [1] [1] [2] Typ 20.0 21.4 21.75 -62 63 265...
Description	1 GHz, 21 dB gain GaAs push-pull amplifier CGY1041<SOT115J\|<<<1<Always Pb-free,;
File Size	79.07K / 8 Page	View it Online	Download Datasheet

				NXP Philips Semiconductors
Part No.	BTH151S-650R
OCR Text	...rent CONDITIONS half sine wave; tmb 103 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10ms, = 3s, tmb 45C, no. of surges = 100k t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/s MIN. -40 MAX. ...
Description	Thyristor High Repetitive Surge
File Size	38.74K / 6 Page	View it Online	Download Datasheet

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