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				SST[Silicon Storage Technology, Inc] SST[Silicon Storage Technology Inc]
Part No.	SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27SF010-70-3C-NH SST27SF010-70-3C-PG SST27SF010-70-3C-PH SST27SF010-70-3C-WG SST27SF010-70-3C-WH SST27SF010-90 SST27SF010-90-3C-NG SST27SF010-90-3C-NH SST27SF010-90-3C-PG SST27SF010-90-3C-PH SST27SF010-90-3C-WG SST27SF010-90-3C-WH SST27SF020 SST27SF020-70 SST27SF020-70-3C-NG SST27SF020-70-3C-NH SST27SF020-70-3C-PG SST27SF020-70-3C-PH SST27SF020-70-3C-WG SST27SF020-70-3C-WH SST27SF020-90 SST27SF020-90-3C-NG SST27SF020-90-3C-NH SST27SF020-90-3C-PG SST27SF020-90-3C-PH SST27SF020-90-3C-WG SST27SF020-90-3C-WH SST27SF256 SST27SF256-70 SST27SF256-70-3C-NG SST27SF256-70-3C-NH SST27SF256-70-3C-PG SST27SF256-70-3C-PH SST27SF256-70-3C-WG SST27SF256-70-3C-WH SST27SF256-90 SST27SF256-90-3C-NG SST27SF256-90-3C-NH SST27SF256-90-3C-PG SST27SF256-90-3C-PH SST27SF256-90-3C-WG SST27SF256-90-3C-WH SST27SF512 SST27SF512-70 SST27SF512-70-3C-NG SST27SF512-70-3C-NH SST27SF512-70-3C-PG SST27SF512-70-3C-PH SST27SF512-70-3C-WG SST27SF512-70-3C-WH SST27SF512-90 SST27SF512-90-3C-NG SST27SF512-90-3C-NH SST27SF512-90-3C-PG SST27SF512-90-3C-PH SST27SF512-90-3C-WG SST27SF512-90-3C-WH
OCR Text	... The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an exte...
Description	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
File Size	255.91K / 26 Page	View it Online	Download Datasheet

				SST[Silicon Storage Technology, Inc]
Part No.	SST28SF040A SST28SF040A-120 SST28SF040A-120-4C-EH SST28SF040A-120-4C-NH SST28SF040A-120-4C-PH SST28SF040A-120-4C-WH SST28SF040A-120-4I-EH SST28SF040A-120-4I-NH SST28SF040A-120-4I-PH SST28SF040A-120-4I-WH SST28SF040A-150-4C-EH SST28SF040A-150-4C-NH SST28SF040A-150-4C-PH SST28SF040A-150-4C-WH SST28SF040A-150-4I-EH SST28SF040A-150-4I-NH SST28SF040A-150-4I-PH SST28SF040A-150-4I-WH SST28SF040A-200-4C-EH SST28SF040A-200-4C-NH SST28SF040A-200-4C-PH SST28SF040A-200-4C-WH SST28SF040A-200-4I-EH SST28SF040A-200-4I-NH SST28SF040A-200-4I-PH SST28SF040A-200-4I-WH SST28SF040A-90 SST28SF040A-90-4C-EH SST28SF040A-90-4C-NH SST28SF040A-90-4C-PH SST28SF040A-90-4C-WH SST28SF040A-90-4I-EH SST28SF040A-90-4I-NH SST28SF040A-90-4I-PH SST28SF040A-90-4I-WH SST28VF040A SST28VF040A-120-4C-NH SST28VF040A-150 SST28VF040A-150-4C-PH SST28VF040A-150-4I-EH SST28VF040A-200 SST28VF040A-200-4C-NH SST28VF040A-200-4C-WH SST28VF040A-200-4I-NH SST28VF040A-200-4I-PH SST28VF040A-90-4C-EH SST28VF040A-120-4C-EH SST28VF040A-120-4C-PH SST28VF040A-120-4C-WH SST28VF040A-120-4I-EH SST28VF040A-120-4I-NH SST28VF040A-120-4I-PH SST28VF040A-120-4I-WH SST28VF040A-150-4C-EH SST28VF040A-150-4C-NH SST28VF040A-150-4C-WH SST28VF040A-150-4I-NH
OCR Text	... The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A confor...
Description	4 Mbit (512K x8) SuperFlash EEPROM 4 Mbit (512K x 8) super-flash EEPROM
File Size	302.89K / 24 Page	View it Online	Download Datasheet

				SST[Silicon Storage Technology, Inc]
Part No.	SST39VF016 SST39VF016-55-4C-B3I SST39VF016-55-4C-B3K SST39VF016-55-4C-EI SST39VF016-55-4C-EK SST39VF016-55-4I-B3I SST39VF016-55-4I-B3K SST39VF016-55-4I-EI SST39VF016-55-4I-EK SST39VF016-70-4C-B3I SST39VF016-70-4C-B3K SST39VF016-70-4C-EI SST39VF016-70-4C-EK SST39VF016-70-4I-B3I SST39VF016-70-4I-B3K SST39VF016-70-4I-EI SST39VF016-70-4I-EK SST39VF016-90-4C-B3I SST39VF016-90-4C-B3K SST39VF016-90-4C-EI SST39VF016-90-4C-EK SST39VF016-90-4I-B3I SST39VF016-90-4I-B3K SST39VF016-90-4I-EI SST39VF016-90-4I-EK SST39LF080 SST39LF080-55-4C-B3I SST39LF080-55-4C-B3K SST39LF080-55-4C-EI SST39LF080-55-4C-EK SST39LF080-55-4I-B3I SST39LF080-55-4I-B3K SST39LF080-55-4I-EI SST39LF080-55-4I-EK SST39LF080-70-4C-B3I SST39LF080-70-4C-B3K SST39LF080-70-4C-EI SST39LF080-70-4C-EK SST39LF080-70-4I-B3I SST39LF080-70-4I-B3K SST39LF080-70-4I-EI SST39LF080-70-4I-EK SST39LF080-90-4C-B3I SST39LF080-90-4C-B3K SST39LF080-90-4C-EI SST39LF080-90-4C-EK SST39LF080-90-4I-B3I SST39LF080-90-4I-B3K SST39LF080-90-4I-EI SST39LF080-90-4I-EK SST39VF080 SST39VF080-55-4C-B3I SST39VF080-55-4C-B3K SST39VF080-55-4C-EI SST39VF080-55-4C-EK SST39VF080-55-4I-B3I SST39VF080-55-4I-B3K SST39VF080-55-4I-EI SST39VF080-55-4I-EK SST39VF080-70-4C-B3
OCR Text	... The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080/016 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080/016 ...
Description	8 Mbit (x8) multi-purpose flash 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash 8 Mbit / 16 Mbit ( x8 ) Multi-purpose Flash
File Size	294.87K / 26 Page	View it Online	Download Datasheet

				Electronics Industry Public Company Limited EIC Semiconductor Inc EIC[EIC discrete Semiconductors] http://
Part No.	SZ10B0 SZ10B1 SZ10B2 SZ10B3 SZ10B5 SZ10B6 SZ10B8 SZ1043 SZ1047 SZ104D SZ104H SZ103J SZ1018 SZ1510 SZ1082 SZ108C SZ105B SZ1011 SZ1015 SZ1091 SZ1075 SZ1012 SZ105G SZ1056 SZ1036 SZ103G SZ10XX SZ1010 SZ1013 SZ1016 SZ1020 SZ1022 SZ1024 SZ1027 SZ1030 SZ1033 SZ1039 SZ103D SZ1051 SZ1062 SZ1068 SZ106C SZ106I SZ107F SZ109B SZ10D0
OCR Text	...mperature at 5.0 mm2 ( 0.013 mm thick ) copper land areas. Fig. 1 POWER TEMPERATURE DERATING CURVE PD, MAXIMUM DISSIPATION (WATTS) 1.25 1.00 0.75 0.50 0.25 0 0 25 50 75 100 125 150 175 5.0 mm2 ( 0.013 mm thick ) copper land areas. TL,...
Description	Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 250μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管） SURFACE MOUNT SILICON ZENER DIODES ZENER DIODE,SINGLE, TWO TERMINAL,10V V(Z),5%,DO-214AC From old datasheet system
File Size	27.76K / 2 Page	View it Online	Download Datasheet

				EIC[EIC discrete Semiconductors] Electronics Industry Public Company Limited
Part No.	SZ5510 SZ5511 SZ5512 SZ5513 SZ5514 SZ5515 SZ5516 SZ5517 SZ5518 SZ5519 SZ5551 SZ554H SZ559B SZ5591 SZ5568 SZ5547 SZ55B4 SZ5556 SZ558C SZ5582 SZ55D0 SZ5520 SZ5522 SZ5524 SZ5527 SZ5528 SZ5530 SZ5533 SZ5536 SZ5539 SZ553J SZ5543 SZ554D SZ555B SZ555G SZ5562 SZ556C SZ556I SZ5575 SZ557F SZ55B0 SZ55B1 SZ55B2 SZ55B3 SZ55B5 SZ55B6 SZ55B8 SZ55B9
OCR Text	...mperature at 5.0 mm2 ( 0.013 mm thick ) copper land areas. Fig. 1 POWER TEMPERATURE DERATING CURVE PD, MAXIMUM DISSIPATION (WATTS) 3.75 3.00 2.25 1.50 0.75 0 0 25 50 75 100 125 150 175 5.0 mm 2 ( 0.013 mm thick ) copper land areas. T...
Description	SURFACE MOUNT SILICON ZENER DIODES
File Size	27.89K / 2 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG] Infineon Technologies A...
Part No.	08090 PTF080901 PTF080901E PTF080901F 8090
OCR Text	... l11 PTF080901 0.76 mm. [.030"] thick, r = 4.5 LDMOS Transistor 2 oz. copper Dimensions: L x W (mm.) 12.83 x 1.35 17.27 x 1.35 9.14 x 1.35 50.80 x 0.75 9.27 x 16.26 14.73 x 15.24 22.61 x 1.27 16.13 x 15.24 22.35 x 2.16 4.95 x 1.37 ...
Description	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
File Size	201.97K / 10 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc.
Part No.	AN884
OCR Text	...ces, the sensor is mounted on a thick ceramic substrate (Figure 1). www.maxim-ic.com/an884 Page 1 of 6 Figure 1. This cross section shows the dual piezo-resistive pressure sensors mounted on a thick ceramic substrate. Piezo-resi...
Description	Miniature Flow Sensor Has Electronic Temperature Compensation
File Size	287.11K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BTS611L1E3230 Q67060-S6302-A4 BTS611L1 BTS611L1E3128A Q67060-S6302-A2 Q67060-S6302-A3
OCR Text	...B FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 3 BTS 611 L1 Parameter and Conditions, each channel at Tj = 25 C, Vbb = 12 V unless otherwise specified...
Description	High Speed CMOS Logic Dual 4-Stage Static Shift Registers 16-PDIP -55 to 125 High Speed CMOS Logic Dual 4-Stage Static Shift Registers 16-SOIC -55 to 125 From old datasheet system Smart Two Channel Highside Power Switch
File Size	191.50K / 14 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BTS612N1E3230 BTS612N1 BTS612-N1 BTS612N1E323
OCR Text	...B FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 3 2003-Oct-01 BTS612N1 Parameter and Conditions, each channel at Tj = 25 C, Vbb = 12 V unless otherw...
Description	Smart Two Channel Highside Power Switch 智能双通道阻抗高侧电源开 Smart High Side Switches - 5,0-34V, 2x200Ω, Limit(scr) 4A TO220
File Size	305.53K / 15 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BTS621L1E3230 BTS621L1 BTS621L1E3128A BTS621-L1 BTS621L1E323
OCR Text	...B FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 3 2003-Oct-01 PROFET(R) BTS621L1 Parameter and Conditions, each channel at Tj = 25 C, Vbb = 12 V unl...
Description	Smart Two Channel Highside Power Switch Smart High Side Switches - 2x100m5,0-34V Limit(scr) 8A TO220
File Size	334.38K / 15 Page	View it Online	Download Datasheet

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