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				International Rectifier
Part No.	IRGP20B60PDPBF
OCR Text	...VCE vs. VGE TJ = 125C 350 300 swiching Time (ns) Fig. 10 - Typ. Diode Forward Characteristics tp = 80s 1000 250 Energy (J) EON 100 tdOFF 200 150 100 50 0 0 5 10 15 IC (A) 20 25 EOFF tdON 10 tF tR 1 0 5 10 15 20...
Description	WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	402.87K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGSL6B60KPBF IRGB6B60KPBF IRGS6B60KPBF
OCR Text	...0 Energy (J) 1000 tdOFF swiching Time (ns) EON 100 400 300 200 100 0 0 5 10 IC (A) 15 20 EOFF tF tdON 10 tR 1 0 5 10 15 20 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 100; VGE=...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	288.98K / 14 Page	View it Online	Download Datasheet

				International Rectifier http://
Part No.	IRGPS40B120UP IRGPS40B120UPBF IRGPS40B120UP-15
OCR Text	...0 500 0 0 20 40 IC (A) 60 80 swiching Time (ns) EON EOFF 100 tdON tR tF 10 20 40 60 80 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 125C; L=200H; VCE= 600V RG= 4.7; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ =...
Description	INSULATED GATE BIPOLAR TRANSISTOR 80 A, 1200 V, N-CHANNEL IGBT
File Size	107.50K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGP50B60PDPBF IRFPE30
OCR Text	...0 30 40 IC (A) 50 60 70 EOFF swiching Time (ns) tdOFF 100 tF tdON tR 10 0 10 20 30 40 50 60 70 IC (A) Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) ...
Description	WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	382.37K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGR3B60KD2 IRGR3B60KD2PBF
OCR Text	...60KD2 250 1000 200 EON swiching Time (ns) Energy (J) 150 EOFF 100 100 tdOFF tF tR tdON 50 0 0 1 2 3 4 5 6 7 IC (A) 10 0 1 2 3 4 5 6 7 8 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=2.5mH; VCE= 40...
Description	600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	253.00K / 13 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	GB30RF60K
OCR Text	...T 1.2 Energy (mJ) EON EOFF 0.4 swiching Time (s) 1 tdOFF tF tdON tR 0.1 0.8 0 30 40 50 60 Ic (A) Fig. 9 - Typ. Energy Loss vs. IC TJ = 125C; L=200H; VCE= 300V,RG= 22; VGE= 15V 1.2 0.01 10 20 45 55 65 Ic (A) Fig. 10 - ...
Description	IGBT PIM MODULE
File Size	395.19K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGB4060DPBF
OCR Text	...m IRGB4060DPbF 500 450 400 swiching Time (ns) 1000 350 Energy (J) 100 tdOFF tF tdON 300 250 200 150 100 50 0 0 EOFF EON 10 tR 1 5 10 I C (A) 15 20 0 5 10 15 20 IC (A) Fig. 13 -...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	287.68K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGB4B60KD1PBF IRGSL4B60KD1 IRGS4B60KD1
OCR Text	...PbF, IRGS/SL4B60KD1 350 300 swiching Time (ns) 1000 250 Energy (J) EON td OFF 100 tF tdON 200 150 100 50 0 1 2 3 4 5 6 7 8 9 10 IC (A) EOFF 10 tR 1 0 2 4 6 8 10 IC (A) Fig. 13 - Typ. Energy Loss vs. IC...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	431.57K / 15 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP50B60PD1PBF
OCR Text	...aracteristics tp = 80s 1000 swiching Time (ns) EON 600 EOFF 400 200 0 0 10 20 30 IC (A) 40 50 60 td OFF 100 tF tdON tR 10 0 10 20 30 40 50 60 IC (A) Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG ...
Description	WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	392.77K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGS15B60KDPBF IRGSL15B60KDPBF IRGB15B60KDPBF
OCR Text	...0 400 200 0 0 10 EOFF EON swiching Time (ns) 1200 tdOFF 100 tdON tF 10 0 tR 10 20 30 40 50 20 IC (A) 30 40 50 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=200H; VCE= 400V RG= 22; VGE= 15V ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	818.85K / 15 Page	View it Online	Download Datasheet

For swiching Found Datasheets File :: 228 Search Time::1.516ms
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